參數(shù)資料
型號(hào)： UPD45128163-A75L
廠商： Elpida Memory, Inc.
英文描述： 128M-bit Synchronous DRAM 4-bank, LVTTL
中文描述： 128兆位同步DRAM 4銀行，LVTTL
文件頁(yè)數(shù)： 19/86頁(yè)
文件大?。?/td> 821K
代理商： UPD45128163-A75L
Data Sheet E0344N10 (Ver. 1.0)
19
μ
PD45128163
6. Programming the Mode Register
The mode register is programmed by the Mode register set command using address bits A11 through A0, BA0(A13)
and BA1(A12) as data inputs. The register retains data until it is reprogrammed or the device loses power.
The mode register has four fields;
Options
: A11 through A7, BA0(A13), BA1(A12)
/CAS latency : A6 through A4
Wrap type
: A3
Burst length : A2 through A0
Following mode register programming, no command can be issued before at least 2 CLK have elapsed.
/CAS Latency
/CAS latency is the most critical of the parameters being set. It tells the device how many clocks must elapse
before the data will be available.
The value is determined by the frequency of the clock and the speed grade of the device.
13.3 Relationship
between Frequency and Latency
shows the relationship of /CAS latency to the clock period and the speed grade of
the device.
Burst Length
Burst Length is the number of words that will be output or input in a read or write cycle. After a read burst is
completed, the output bus will become Hi-Z.
The burst length is programmable as 1, 2, 4, 8 or full page.
Wrap Type (Burst Sequence)
The wrap type specifies the order in which the burst data will be addressed. This order is programmable as either
“Sequential” or “Interleave”. The method chosen will depend on the type of CPU in the system.
Some microprocessor cache systems are optimized for sequential addressing and others for interleaved
addressing.
7.1 Burst Length and Sequence
shows the addressing sequence for each burst length using them.
Both sequences support bursts of 1, 2, 4 and 8. Additionally, sequence supports the full page length.
相關(guān)PDF資料
PDF描述
UPD45128163G5-A10LT-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A80T-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A75T-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A10T-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A80-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPD45128163G5 制造商:Renesas Electronics Corporation 功能描述:128 MBIT SDRAM
UPD45128163G5-A75-9JF 制造商:Elpida Memory Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
UPD45128841G5-A75-9JF 制造商:NEC Electronics Corporation 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP
UPD4516161AG5A109NF 制造商:NEC Electronics Corporation 功能描述:
UPD4516161AG5-A10-9NF 制造商:NEC Electronics Corporation 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP
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