參數(shù)資料
型號(hào): UPD45128163-A75L
廠商: Elpida Memory, Inc.
英文描述: 128M-bit Synchronous DRAM 4-bank, LVTTL
中文描述: 128兆位同步DRAM 4銀行,LVTTL
文件頁數(shù): 29/86頁
文件大?。?/td> 821K
代理商: UPD45128163-A75L
Data Sheet E0344N10 (Ver. 1.0)
29
μ
PD45128163
12. Burst Termination
There are two methods to terminate a burst operation other than using a Read or a Write command. One is the
burst stop command and the other is the precharge command.
12.1 Burst Stop Command
During a read cycle, when the burst stop command is issued, the burst read data are terminated and the data bus
goes to Hi-Z after the /CAS latency from the burst stop command.
READ
Command
CLK
T0
T2
T1
T3
T4
T5
T6
T7
Burst length = X
Q1
Q2
Q3
DQ
/CAS latency = 2
Hi-Z
Q1
Q2
Q3
DQ
/CAS latency = 3
Hi-Z
BST
Remark
BST: Burst stop command
During a write cycle, when the burst stop command is issued, the burst write data are terminated and data bus goes
to Hi-Z at the same clock with the burst stop command.
D2
D3
D4
WRITE
DQ
Command
/CAS latency = 2, 3
CLK
T0
T2
T1
T3
T4
T5
T6
T7
Burst length = X
BST
Hi-Z
D1
Remark
BST: Burst stop command
相關(guān)PDF資料
PDF描述
UPD45128163G5-A10LT-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A80T-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A75T-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A10T-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A80-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPD45128163G5 制造商:Renesas Electronics Corporation 功能描述:128 MBIT SDRAM
UPD45128163G5-A75-9JF 制造商:Elpida Memory Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
UPD45128841G5-A75-9JF 制造商:NEC Electronics Corporation 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP
UPD4516161AG5A109NF 制造商:NEC Electronics Corporation 功能描述:
UPD4516161AG5-A10-9NF 制造商:NEC Electronics Corporation 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP