參數(shù)資料
型號(hào): UPD4616112F9-B85LX-BC2
廠商: NEC Corp.
英文描述: 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
中文描述: 1,600位CMOS移動(dòng)指明內(nèi)存100萬字由16位溫度范圍
文件頁數(shù): 11/32頁
文件大?。?/td> 212K
代理商: UPD4616112F9-B85LX-BC2
Data Sheet M15794EJ2V0DS
11
μ
PD4616112-X
Read Cycle Timing Chart 1
t
CHZ
t
OH
t
CLZ
t
ACS
/CS
(Input)
I/O
(Output)
t
BLZ
t
BA
t
BHZ
/OE
(Input)
/LB, /UB
(Input)
t
OE
t
SKEW
t
SKEW
t
CP
t
CP
t
RC
t
OLZ
t
OHZ
t
CHZ
t
CLZ
t
ACS
I/O
(Output)
t
BLZ
t
BA
t
BHZ
/OE
(Input)
/LB, /UB
(Input)
t
OE
t
SKEW
t
CP
t
CP
t
RC
t
OLZ
t
OHZ
/CS
(Input)
t
SKEW
High impedance
High impedance
Address (Input)
Address (Input)
Data out
Data out
Caution If the address is changed using a value that is either lower than the minimum value or higher than
the maximum value for the read cycle time (t
RC
), none of the data can be guaranteed.
Remark
In read cycle, /WE should be fixed to High.
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UPD4616112-X 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
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