參數(shù)資料
型號： UPD4616112F9-BC80-BC2
廠商： NEC Corp.
英文描述： 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
中文描述： 1,600位CMOS移動指明內(nèi)存100萬字由16位
文件頁數(shù)： 24/32頁
文件大小： 220K
代理商： UPD4616112F9-BC80-BC2
Data Sheet M15085EJ5V0DS
24
μ
PD4616112
Read Write Cycle (BC version)
Parameter
Symbol
MIN.
MAX.
Unit
Notes
Read write cycle time
t
RWC
10,000
ns
1, 2
Byte write setup time
t
BWS
20
ns
Byte read setup time
t
BRS
20
ns
Notes 1.
Make settings so that the sum (t
RWC
) of the identical address read cycle time (t
RC1
) and the identical address
write cycle time (t
WC1
) is 10
μ
s or less when a write is performed at the identical address using /UB following
a read using /LB with /CS low level, or when a write is performed using /LB following a read using /UB.
2.
Make settings so that the sum (t
RWC
) of the identical address read cycle time (t
RC1
) and the identical address
write cycle time (t
WC1
) is 10
μ
s or less when a read is performed at the identical address using /UB following
a write using /LB with /CS low level, or when a read is performed using /LB following a write using /UB.
相關(guān)PDF資料
PDF描述
UPD4616112 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
UPD4616112-X 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD4616112F9-BC90-BC2 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
UPD4664312-X 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD4664312F9-B65X-CR2 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
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