參數(shù)資料
型號(hào)： UPD4616112F9-BC80-BC2
廠商： NEC Corp.
英文描述： 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
中文描述： 1,600位CMOS移動(dòng)指明內(nèi)存100萬字由16位
文件頁數(shù)： 5/32頁
文件大小： 220K
代理商： UPD4616112F9-BC80-BC2
Data Sheet M15085EJ5V0DS
5
μ
PD4616112
#
Truth Table
/CS
MODE
/OE
/WE
/LB
/UB
Mode
I/O
Supply current
I/O0 - I/O7
I/O8 - I/O15
H
H
×
×
×
×
×
×
×
×
×
×
Not selected (Standby Mode 1)
High impedance
High impedance
I
SB1
H
L
Not selected (Standby Mode 2)
High impedance
High impedance
I
SB2
L
H
H
H
Output disable
High impedance
High impedance
I
CCA
L
H
L
L
Word read
D
OUT
D
OUT
L
H
Lower byte read
D
OUT
High impedance
H
L
Upper byte read
High impedance
D
OUT
H
H
Output disable
High impedance
High impedance
×
L
L
L
Word write
D
IN
D
IN
L
H
Lower byte write
D
IN
High impedance
H
L
Upper byte write
High impedance
D
IN
H
H
Write abort
High impedance
High impedance
Caution MODE pin must be fixed to High except Standby Mode 2.
Remark
×
: V
IH
or V
IL
Initialization
The
μ
PD4616112 is initialized in the power-on sequence according to the following.
(1) To stabilize internal circuits, before turning on the power, a 200
μ
s or longer wait time must precede any signal
toggling.
(2) After the wait time, read operation must be performed at least 3 times. After that, it can be normal operation.
Initialization Timing Chart
V
CC
V
CC
(MIN.)
V
IH
(MIN.)
V
IH
(MIN.)
t
RC
t
CP
200 s
Address (Input)
/CS (Input)
MODE (Input)
Wait Time
Power On
Read Operation 3 times
Normal
Operation
μ
Cautions 1. Following power application, make MODE and /CS high level during the wait time interval.
2.
Following power application, make MODE high level during the wait time and three read
operations.
3. The read operation must satisfy the specs described on page 10 (Read Cycle (BC Version)).
4. The address is don’t care (V
IH
or V
IL
) during read operation.
5. Read operation must be executed with toggled the /CS pin.
6. To prevent bus contention, it is recommended to set /OE to high level.
7. Do not input data to the I/O pins if /OE is low level during a read operation.
相關(guān)PDF資料
PDF描述
UPD4616112 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
UPD4616112-X 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD4616112F9-BC90-BC2 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
UPD4664312-X 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD4664312F9-B65X-CR2 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
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