參數(shù)資料
型號: V53C1256162VBLT8EPC
廠商: Electronic Theatre Controls, Inc.
英文描述: 256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
中文描述: 片256Mbit移動SDRAM 2.5伏FBGA封裝16米x 16
文件頁數(shù): 22/46頁
文件大?。?/td> 541K
代理商: V53C1256162VBLT8EPC
22
V55C2256164VB Rev. 1.0 April 2005
ProMOS TECHNOLOGIES
V55C2256164VB
6.2 Write Interrupted by a Read
(Burst Length = 4, CAS latency = 2, 3)
7. Burst Write with Auto-Precharge
Burst Length = 2, CAS latency = 2, 3)
COMMAND
NOP
WRITE A
READ B
NOP
NOP
NOP
NOP
NOP
NOP
t
CK2,
I/O’s
CAS latency = 2
DIN A0
t
CK3,
I/O’s
CAS latency = 3
DIN A0
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT B3
DOUT B0
DOUT B1
DOUT B2
DOUT B3
don’t care
don’t care
don’t care
DOUT B0
DOUT B1
DOUT B2
Input data must be removed from the I/O’s at least one clock
cycle before the Read dataAPpears on the outputs to avoid
data contention.
COMMAND
NOP
NOP
NOP
WRITE A
Auto-Precharge
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
BANK A
ACTIVE
NOP
NOP
DIN A0
DIN A1
I/O’s
CAS latency = 3
I/O’s
CAS latency = 2
Begin Autoprecharge
Bank can be reactivated after trp
t
WR
t
RP
DIN A0
DIN A1
t
WR
t
RP
NOP
*
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