參數(shù)資料
型號: V53C364405A
廠商: Mosel Vitelic, Corp.
英文描述: 3.3 Volt 16M X 4 EDO Page Mode CMOS Dynamic RAM(3.3V 16Mx4 EDO頁面模式CMOS動態(tài)RAM)
中文描述: 3.3伏特16米x 4 EDO公司頁面模式的CMOS動態(tài)RAM(3.3 16Mx4 EDO公司頁面模式的CMOS動態(tài)內(nèi)存)
文件頁數(shù): 4/28頁
文件大?。?/td> 178K
代理商: V53C364405A
4
V53C364405A Rev. 1.2 June 1998
MOSEL V ITELIC
V53C364405A
DC and Operating Characteristics
T
A
= 0
°
C to 70
°
C, V
CC
(1, 2)
= 3.3 V
±
0.3 V, V
SS
= 0 V, unless otherwise specified.
Symbol
Parameter
Access
Time
V53C364405A
Unit
Test Conditions
Notes
Min.
Typ.
Max.
I
LI
Input Leakage Current
(any input pin)
–2
2
m
A
V
SS
V
IN
V
CC
I
LO
Output Leakage Current
(for High-Z State)
–2
2
m
A
V
RAS, CAS at V
SS
V
OUT
V
CC
IH
I
CC1
V
Operating
CC
Supply Current,
40
125
mA
t
RC
= t
RC
(min.)
2, 3, 4
50
100
60
84
I
CC2
V
TTL Standby
CC
Supply Current,
1
mA
RAS, CAS at V
other inputs
IH
3
V
SS
I
CC3
V
RAS-Only Refresh
CC
Supply Current,
40
125
mA
t
RC
= t
RC
(min.)
2, 4
50
100
60
84
I
CC4
V
EDO Page Mode
Operation
CC
Supply Current,
40
140
mA
Minimum Cycle
2, 3, 4
50
105
60
85
I
CC5
V
CMOS Standby
CC
Supply Current,
500
m
A
RAS
CAS
3
3
V
V
CC
– 0.2 V,
– 0.2 V
CC
I
CC5
V
CMOS Standby
(L-Version)
CC
Supply Current,
120
m
A
RAS
CAS
3
3
V
V
CC
– 0.2 V,
– 0.2 V
CC
I
CC6
Average Self Refresh
Current CBR cycle with
t
RAS
> t
RASS
(L-version)
CAS held low, WE =
V
CC
– 0.2V, Address
and D
IN
= V
or 0.2V
min.,
CC
– 0.2V
400
m
A
I
CC7
V
during CAS-before-RAS
Refresh
CC
Supply Current,
40
170
mA
2, 4
50
140
60
115
V
IL
Input Low Voltage
–0.3
0.8
V
1
V
IH
Input High Voltage
2.0
V
CC
+0.3
V
1
V
OL
Output Low Voltage
0.4
V
I
OL
= 2 mA
1
V
OH
Output High Voltage
2.4
V
I
OH
= –2 mA
1
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