參數(shù)資料
型號: VS28F016SV
廠商: Intel Corp.
英文描述: 16-Mbit(1MBitx16) FLASHFILE MEMORY(16M位FLASHFILE存儲器)
中文描述: 16兆位(1MBitx16)FLASHFILE記憶(1,600位FLASHFILE存儲器)
文件頁數(shù): 43/50頁
文件大小: 612K
代理商: VS28F016SV
VS28F016SV, MS28F016SV FlashFile
TM
Memory
271312–24
NOTES:
1. This address string depicts data-write/erase cycles with corresponding verification via ESRD.
2. This address string depicts data-write/erase cycles with corresponding verification via CSRD.
3. This cycle is invalid when using CSRD for verification during data write/erase operations.
4. CEx
Y
is defined as the latter of CE
0
Y
or CE
Y
going low or the first of CE
Y
or CE
1
Y
going high.
5. RP
Y
low transition is only to show t
RHPL
; not valid for above Read and Write cycles.
6. V
PP
voltage during Write/Erase operations valid at both 12.0V and 5.0V.
7. V
PP
voltage equal to or below V
PPLK
provides complete flash memory array protection.
Figure 15. Alternate AC Waveforms for Command Write Operations
43
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