參數資料
型號： W25Q80BVDAAP
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 8M X 1 SPI BUS SERIAL EEPROM, PDIP8
封裝： 0.300 INCH, GREEN, PLASTIC, DIP-8
文件頁數： 40/75頁
文件大?。?/td> 1055K
代理商： W25Q80BVDAAP
W25Q80BV
Publication Release Date: October 06, 2010
- 45 -
Revision D
9.2.27 Erase / Program Suspend (75h)
The Erase/Program Suspend instruction “75h”, allows the system to interrupt a Sector or Block Erase
operation or a Page Program operation and then read from or program/erase data to, any other sectors
or blocks. The Erase/Program Suspend instruction sequence is shown in figure 25.
The Write Status Register instruction (01h) and Erase instructions (20h, 52h, D8h, C7h, 60h, 44h) are not
allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If
written during the Chip Erase operation, the Erase Suspend instruction is ignored. The Write Status
Register instruction (01h) and Program instructions (02h, 32h, 42h) are not allowed during Program
Suspend. Program Suspend is valid only during the Page Program or Quad Page Program operation.
The Erase/Program Suspend instruction “75h” will be accepted by the device only if the SUS bit in the
Status Register equals to 0 and the BUSY bit equals to 1 while a Sector or Block Erase or a Page
Program operation is on-going. If the SUS bit equals to 1 or the BUSY bit equals to 0, the Suspend
instruction will be ignored by the device. A maximum of time of “tSUS” (See AC Characteristics) is required
to suspend the erase or program operation. The BUSY bit in the Status Register will be cleared from 1 to
0 within “tSUS” and the SUS bit in the Status Register will be set from 0 to 1 immediately after
Erase/Program Suspend. For a previously resumed Erase/Program operation, it is also required that the
Suspend instruction “75h” is not issued earlier than a minimum of time of “tSUS” following the preceding
Resume instruction “7Ah”.
Unexpected power off during the Erase/Program suspend state will reset the device and release the
suspend state. SUS bit in the Status Register will also reset to 0. The data within the page, sector or
block that was being suspended may become corrupted. When the device is powered up again, it is
recommended for the user to repeat the same Erase or Program operation that was interrupted, at the
same address location, to avoid the potention data corruption.
/CS
CLK
DI
(IO
0)
DO
(IO
1)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (75h)
High Impedance
Mode 0
Mode 3
tSUS
Accept instructions
Figure 25. Erase/Program Suspend Instruction Sequence
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相關代理商/技術參數
參數描述
W25Q80BVDAIG 功能描述:SPI FLASH 8MBIT 8-DIP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應商設備封裝:8-MSOP 包裝:帶卷 (TR)
W25Q80BVDAIP 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BVSNAG 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BVSNAP 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BVSNIG 功能描述:IC SPI FLASH 8MBIT 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標準包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應商設備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8
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