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參數(shù)資料
| 型號： | W3E16M64S-250BC |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 16M X 64 DDR DRAM, 0.8 ns, PBGA219 |
| 封裝： | 21 X 25 MM, PLASTIC, BGA-219 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 406K |
| 代理商： | W3E16M64S-250BC |
10
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3E16M64S-XBX
January 2008
Rev. 5
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on VCC, VCCQ Supply relative to Vss
-1 to 3.6
V
Voltage on I/O pins relative to VSS
-1 to 3.6
V
Operating Temperature TA (Mil)
-55 to +125
°C
Operating Temperature TA (Ind)
-40 to +85
°C
Storage Temperature, Plastic
-55 to +150
°C
NOTE:
Stress greater than those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions greater than those indicated in the
operational sections of this specication is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
CAPACITANCE (NOTE 13)
Parameter
Symbol
Max
Unit
Input Capacitance: CLK
CI1
8
pF
Addresses, BA0-1 Input Capacitance
CA
30
pF
Input Capacitance: All other input-only pins
CI2
8
pF
Input/Output Capacitance: I/Os
CIO
12
pF
BGA THERMAL RESISTANCE
Description
Symbol
Max
Units
Notes
Junction to Ambient (No Airow)
Theta JA
14.5
°C/W
1
Junction to Ball
Theta JB
10.0
°C/W
1
Junction to Case (Top)
Theta JC
5.4
°C/W
1
NOTE 1:
Refer to PBGA Thermal Resistance Correlation application note at www.whiteedc.com in
the application notes section for modeling conditions.
相關PDF資料 |
PDF描述 |
|---|---|
| W3E16M72S-266BI | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3E16M72S-200BI | 16M X 72 DDR DRAM, 0.8 ns, PBGA219 |
| W3E16M72SR-200BM | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3E16M72SR-200BC | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3E16M72SR-200BM | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W3E16M64S-250BI | 制造商:Microsemi Corporation 功能描述:16M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E16M64S-250BM | 制造商:Microsemi Corporation 功能描述:16M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E16M64S-266BC | 制造商:Microsemi Corporation 功能描述:16M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E16M64S-266BI | 制造商:Microsemi Corporation 功能描述:16M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E16M64S-266BM | 制造商:Microsemi Corporation 功能描述:16M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
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