參數(shù)資料
型號(hào)： W3E16M64S-250BC
廠商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類： DRAM
英文描述： 16M X 64 DDR DRAM, 0.8 ns, PBGA219
封裝： 21 X 25 MM, PLASTIC, BGA-219
文件頁(yè)數(shù)： 3/16頁(yè)
文件大?。?/td> 406K
代理商： W3E16M64S-250BC
11
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3E16M64S-XBX
January 2008
Rev. 5
ICC SPECIFICATIONS AND CONDITIONS (NOTES 1-5, 10, 12, 14)
VCC = +2.5V ±0.2V; -55°C ≤ TA ≤ +125°C
Max
Parameter/Condition
Symbol
250Mbps
266Mbps 200Mbps Units
OPERATING CURRENT: One bank; Active-Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM, and DQS inputs
changing once per clock cyle; Address and control inputs changing once every two clock cycles; (22, 48)
ICC0
500
480
mA
OPERATING CURRENT: One bank; Active-Read-Precharge; Burst = 2; tRC = tRC (MIN); tCK = tCK (MIN); IOUT = 0mA;
Address and control inputs changing once per clock cycle (22, 48)
ICC1
680
620
mA
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; Power-down mode; tCK = tCK (MIN); CKE =
LOW; (23, 32, 50)
ICC2P
16
mA
IDLE STANDBY CURRENT: CS = HIGH; All banks idle; tCK = tCK (MIN); CKE = HIGH; Address and other control
inputs changing once per clock cycle. VIN = VREF for DQ, DQS, and DM (51)
ICC2F
180
mA
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active; Power-down mode; tCK = tCK (MIN); CKE = LOW
(23, 32, 50)
ICC3P
120
mA
ACTIVE STANDBY CURRENT: CS = HIGH; CKE = HIGH; One bank; Active-Precharge; tRC = tRAS (MAX); tCK = tCK
(MIN); DQ, DM, and DQS inputs changing twice per clock cycle; Address and other control inputs changing once
per clock cycle (22)
ICC3N
200
mA
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank active; Address and control inputs
changing once per clock cycle; tCK = tCK (MIN); IOUT = 0mA (22, 48)
ICC4R
740
mA
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One bank active; Address and control inputs
changing once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle (22)
ICC4W
640
mA
AUTO REFRESH CURRENT
tRC = tRC (MIN) (27, 50)
ICC5
980
mA
tRC = 7.8125μs (27, 50)
ICC5A
24
mA
SELF REFRESH CURRENT: CKE ≤ 0.2V
Standard (11)
ICC6
16
mA
OPERATING CURRENT: Four bank interleaving READs (BL=4) with auto precharge, tRC =tRC (MIN); tCK = tCK
(MIN); Address and control inputs change only during Active READ or WRITE commands. (22, 49)
ICC7
1600
mA
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1, 6)
VCC = +2.5V ±0.2V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Min
Max
Units
Supply Voltage
VCC
2.3
2.7
V
I/O Supply Voltage
VCCQ
2.3
2.7
V
Input High Voltage: Logic 1; All inputs (21)
VIH
VREF - 0.04
VREF + 0.04
V
Input Low Voltage: Logic 0; All inputs (21)
VIL
-0.3
VREF - 0.15
V
Input Leakage Current: Any input 0V ≤ VIN ≤ VCC (All other pins not under test = 0V)
II
-2
2
μA
Input Leakage Address Current (All other pins not under test = 0V)
II
-8
8
μA
Output Leakage Current: I/Os are disabled; 0V ≤ VOUT ≤ VCC
IOZ
-5
5
μA
Output Levels: Full drive option
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)
IOH
-12—mA
IOL
12
—
mA
Output Levels: Reduced drive option
High Current (VOUT = VCCQ - 0.763V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.763V, maximum VREF, maximum VTT)
IOHR
-9
—
mA
IOLR
mA
I/O Reference Voltage
VREF
0.49 x VCCQ
0.51 x VCCQ
V
I/O Termination Voltage
VTT
VREF - 0.04
VREF + 0.04
V
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PDF描述
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W3E16M72S-200BI 16M X 72 DDR DRAM, 0.8 ns, PBGA219
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W3E16M72SR-200BC 16M X 72 DDR DRAM, 0.75 ns, PBGA219
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W3E16M64S-250BI 制造商:Microsemi Corporation 功能描述:16M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk
W3E16M64S-250BM 制造商:Microsemi Corporation 功能描述:16M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, MIL-TEMP. - Bulk
W3E16M64S-266BC 制造商:Microsemi Corporation 功能描述:16M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk
W3E16M64S-266BI 制造商:Microsemi Corporation 功能描述:16M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk
W3E16M64S-266BM 制造商:Microsemi Corporation 功能描述:16M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, MIL-TEMP. - Bulk
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