參數(shù)資料
型號： W9412G2IB-4
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 4M X 32 DDR DRAM, 0.6 ns, PBGA144
封裝： 12 X 12 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LFBGA-144
文件頁數(shù)： 1/50頁
文件大?。?/td> 826K
代理商： W9412G2IB-4
W9412G2IB
1M
× 4 BANKS × 32 BITS GDDR SDRAM
Publication Release Date: Aug. 30, 2010
- 1 -
Revision A06
Table of Contents-
1. GENERAL DESCRIPTION.................................................................................................................................4
2. FEATURES ........................................................................................................................................................4
3. KEY PARAMETERS...........................................................................................................................................5
4. BALL CONFIGURATION....................................................................................................................................6
5. BALL DESCRIPTION .........................................................................................................................................7
6. BLOCK DIAGRAM..............................................................................................................................................9
7. FUNCTIONAL DESCRIPTION .........................................................................................................................10
7.1
Power Up Sequence...........................................................................................................................10
7.2
Command Function ............................................................................................................................11
7.2.1
Bank Activate Command ......................................................................................................11
7.2.2
Bank Precharge Command ..................................................................................................11
7.2.3
Precharge All Command ......................................................................................................11
7.2.4
Write Command ...................................................................................................................11
7.2.5
Write with Auto-precharge Command ..................................................................................11
7.2.6
Read Command ...................................................................................................................11
7.2.7
Read with Auto-precharge Command ..................................................................................11
7.2.8
Mode Register Set Command ..............................................................................................12
7.2.9
Extended Mode Register Set Command ..............................................................................12
7.2.10
No-Operation Command ......................................................................................................12
7.2.11
Burst Read Stop Command..................................................................................................12
7.2.12
Device Deselect Command ..................................................................................................12
7.2.13
Auto Refresh Command .......................................................................................................12
7.2.14
Self Refresh Entry Command...............................................................................................13
7.2.15
Self Refresh Exit Command .................................................................................................13
7.2.16
Data Write Enable /Disable Command .................................................................................13
7.3
Read Operation ..................................................................................................................................13
7.4
Write Operation ..................................................................................................................................14
7.5
Precharge...........................................................................................................................................14
7.6
Burst Termination ...............................................................................................................................14
7.7
Refresh Operation ..............................................................................................................................14
7.8
Power Down Mode .............................................................................................................................15
7.9
Input Clock Frequency Change during Precharge Power Down Mode...............................................15
7.10
Mode Register Operation ...................................................................................................................15
7.10.1
Burst Length field (A2 to A0) ................................................................................................16
7.10.2
Addressing Mode Select (A3)...............................................................................................16
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W9412G2IB-5 制造商:Winbond Electronics Corp 功能描述:8*16 DDR1
W9412G6CH 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M 】 4 BANKS 】 16 BITS DDR SDRAM
W9412G6IH 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M × 4 BANKS × 16 BITS DDR SDRAM
W9412G6IH-5 功能描述:IC DDR-400 SDRAM 128MB 66TSSOPII RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR)
W9412G6JH 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M ? 4 BANKS ? 16 BITS DDR SDRAM
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