參數(shù)資料
型號(hào): W9412G2IB-4
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 4M X 32 DDR DRAM, 0.6 ns, PBGA144
封裝: 12 X 12 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LFBGA-144
文件頁數(shù): 21/50頁
文件大小: 826K
代理商: W9412G2IB-4
W9412G2IB
Publication Release Date: Aug. 30, 2010
- 28 -
Revision A06
9.6 AC Characteristics and Operating Condition
-4
-5/-5I
-6/-6I
SYM.
PARAMETER
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
UNIT NOTES
tRC
Active to Ref/Active Command Period
48
50
54
tRFC
Ref to Ref/Active Command Period
60
70
tRAS
Active to Precharge Command Period
40
70000
40
100000
42
100000
nS
tRCDRD
RAS to CAS delay for Read
5
4
3
tRCDWR
RAS
to CAS delay for Write
3
2
tCK
tRAP
Active to Read with Auto-precharge Enable
16
15
18
nS
tCCD
Read/Write(a) to Read/Write(b) Command
Period
1
tCK
tRP
Precharge to Active Command Period
16
15
18
tRRD
Active(a) to Active(b) Command Period
12
10
12
nS
tWR
Write Recovery Time
3
2
tDAL
Auto-precharge Write Recovery + Precharge
Time
-
tCK
18
CL = 2
-
7.5
12
7.5
12
CL = 2.5
-
6
12
6
12
CL = 3
4
12
5
12
6
12
tCK
CLK Cycle Time
CL = 4
4
12
-
tAC
Data Access Time from CLK, CLK
-0.6
0.6
-0.7
0.7
-0.7
0.7
tDQSCK
DQS Output Access Time from CLK, CLK
-0.6
0.6
-0.6
0.6
-0.6
0.6
16
tDQSQ
Data Strobe Edge to Output Data Edge Skew
-
0.4
-
0.4
nS
tCH
CLk High Level Width
0.45
0.55
0.45
0.55
0.45
0.55
tCL
CLK Low Level Width
0.45
0.55
0.45
0.55
0.45
0.55
tCK
11
tHP
CLK Half Period (minimum of actual tCH, tCL)
min
(tCL,tCH)
min,
(tCL,tCH)
min,
(tCL,tCH)
tQH
DQ Output Data Hold Time from DQS
tHP
-0.5
tHP
-0.5
tHP
-0.5
nS
tRPRE
DQS Read Preamble Time
0.9
1.1
0.9
1.1
0.9
1.1
tRPST
DQS Read Postamble Time
0.4
0.6
0.4
0.6
0.4
0.6
tCK
11
tDS
DQ and DM Setup Tim
0.4
tDH
DQ and DM Hold Time
0.4
tDIPW
DQ and DM Input Pulse Width (for each input)
1.75
nS
tDQSH
DQS Input High Pulse Width
0.4
0.6
0.4
0.6
0.4
0.6
tDQSL
DQS Input Low Pulse Width
0.4
0.6
0.4
0.6
0.4
0.6
tDSS
DQS Falling Edge to CLK Setup Time
0.2
tDSH
DQS Falling Edge Hold Time from CLK
0.2
tCK
11
tWPRES
Clock to DQS Write Preamble Set-up Time
0
nS
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