參數(shù)資料
型號: W942508BH
英文描述: DRAM
中文描述: 內(nèi)存
文件頁數(shù): 11/45頁
文件大?。?/td> 1601K
代理商: W942508BH
W942508BH
Publication Release Date: March 19, 2002
- 11 -
Revision A1
13. AC TEST CONDITIONS
PARAMETER
SYMBOL
VALUE
UNIT
Input High Voltage (AC)
V
IH
V
REF
+0.31
V
Input Low Voltage (AC)
V
IL
V
REF
-0.31
V
Input Reference Voltage
V
REF
0.5 x V
DDQ
V
Termination Voltage
V
TT
0.5 x V
DDQ
V
Input Signal Peak to Peak Swing
V
SWING
1.0
V
Differential Clock Input Reference Voltage
V
R
V
x
(AC)
V
Input Difference Voltage. CLK and CLK Inputs (AC)
V
ID (AC)
1.5
V
Input Signal Minimum Slew Rate
SLEW
1.0
V/nS
Output Timing Measurement Reference Voltage
V
OTR
0.5 x V
DDQ
V
V
SWING (MAX)
V
DD
Q
V
SS
T
T
V
IH
min (AC)
V
REF
V
IL
max (AC)
SLEW = (V
IH
min (AC) - V
IL
max (AC)) /
T
Output
R
T
= 50 ohms
VTT
A.C. TEST LOAD (A)
Z = 50 ohms
output
30pF
Measurement point
Notes:
(1)
Conditions outside the limits listed under "ABSOLUTE MAXIMUM RATINGS" may cause permanent damage to the
device.
(2)
All voltages are referenced to V
SS
, V
SSQ.
(3)
Peak to peak AC noise on V
REF
may not exceed
±
2% V
REF(DC).
V
OH
= 1.95V, V
OL
= 0.35V
(4)
(5)
V
OH
= 1.9V, V
OL
= 0.4V
(6)
The values of I
OH (DC)
is based on V
DDQ
= 2.3V and V
TT
= 1.19V.
The values of I
OL (DC)
is based on V
DDQ
= 2.3V and V
TT
= 1.11V.
These parameters depend on the cycle rate and these values are measured at a cycle rate with the minimum values
of t
CK
and t
RC
.
(7)
相關(guān)PDF資料
PDF描述
W942516BH DRAM
W9451GBDA-6 SDRAM|DDR|64MX64|CMOS|DIMM|184PIN|PLASTIC
W981204AH-75 x4 SDRAM
W981204AH-8H x4 SDRAM
W982504AH-7 x4 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W942508CH 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM
W942508CH-5 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM
W942508CH-6 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM
W942508CH-7 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM
W942508CH-75 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM