參數(shù)資料
型號(hào)： W9751G6JB-25A
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 32M X 16 DDR DRAM, 0.4 ns, PBGA84
封裝： 12.50 X 8 MM, ROHS COMPLIANT, WBGA-84
文件頁(yè)數(shù)： 42/86頁(yè)
文件大?。?/td> 1030K
代理商： W9751G6JB-25A
W9751G6JB
Publication Release Date: Mar. 10, 2010
- 47 -
Revision A02
Notes:
1. All voltages are referenced to VSS.
2. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage
levels, but the related specifications and device operation are guaranteed for the full voltage range specified. ODT is
disabled for all measurements that are not ODT-specific.
3. AC timing reference load:
DQ
DQS
Output
Timing
reference
point
VTT = VDDQ/2
25
VDDQ
DUT
Figure 16 — AC timing reference load
4. This is a minimum requirement. Minimum read to precharge timing is AL + BL / 2 provided that the tRTP and tRAS(min)
have been satisfied.
5. If refresh timing is violated, data corruption may occur and the data must be re-written with valid data before a valid READ
can be executed.
6. This is an optional feature. For detailed information, please refer to “operating temperature condition” section 9.2 in this data
sheet.
7. tCKE min of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the
valid input level the entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not
transition from its valid level during the time period of tIS + 2 x tCK + tIH.
8. A minimum of two clocks (2 *nCK) is required irrespective of operating frequency.
9. tWTR is at least two clocks (2 * nCK) independent of operation frequency.
10. There are two sets of values listed for Command/Address input setup time: tIS(base) and tIS(ref). The tIS(ref) value (for
reference only) is equivalent to the baseline value of tIS(base) at VREF when the slew rate is 1.0 V/nS. The baseline value
tIS(base) is the JEDEC defined value, referenced from the input signal crossing at the VIH(ac) level for a rising signal and
VIL(ac) for a falling signal applied to the device under test. See Figure 17. If the Command/Address slew rate is not equal to
1.0 V/nS, then the baseline values must be derated by adding the values from table of tIS/tIH derating values for DDR2-667,
DDR2-800 and DDR2-1066 (page 55).
CLK
tIS(base) tIH(base)
VDDQ
VIH(ac) min
VIH(dc) min
VREF(dc)
VIL(dc) max
VIL(ac) max
VSS
tIS(ref)
tIH(ref)
tIS(ref)
tIH(ref)
Logic levels
VREF levels
Figure 17 — Differential input waveform timing – tIS and tIH
相關(guān)PDF資料
PDF描述
W9751G8JB-18 DDR DRAM, PBGA84
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W9812G6JH-6 8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
W986416AH-10 4M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W9751G6JB-3 制造商:Winbond Electronics Corp 功能描述:512MB DDRII
W9751G6KB 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 4 BANKS ? 16 BIT DDR2 SDRAM
W9751G6KB-18 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W9751G6KB-25 功能描述:IC DDR2 SDRAM 512MBIT 84WBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
W9751G6KB25A 制造商:WINBOND 制造商全稱:Winbond 功能描述:Double Data Rate architecture: two data transfers per clock cycle
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