參數(shù)資料
型號(hào): W987X6CBG80
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
封裝: 8 X 9 MM, 1.20 MM HEIGHT, FBGA-54
文件頁(yè)數(shù): 22/46頁(yè)
文件大?。?/td> 1634K
代理商: W987X6CBG80
Preliminary W987X6CB
Publication Release Date: June 6, 2002
- 29 -
Revision A1
Operating Timing Example, continued
Interleaved Bank Write (Burst Length = 8, Auto Precharge)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
tRC
tRAS
tRP
tRAS
tRP
tRCD
tRRD
RAa
CAx
RBb
CBy
RAb
RAc
ax0
ax1
ax4
ax5
ax6
ax7
by0
by1
by2
by3
by4
by5
by6
by7
CZ0
CZ1
CZ2
CAz
(CLK = 100 MHz)
* AP is the internal precharge start timing
CLK
DQ
CKE
DQM
A0-A9,
A11
A10
BS0
WE
CAS
RAS
CS
BS1
Active
Write
Active
Bank #0
Idle
Bank #1
Bank #2
Bank #3
AP*
Active
Write
AP*
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