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參數(shù)資料
| 型號： | WEDPNF8M722V-1010BC |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA275 |
| 封裝： | 32 X 25 MM, PLASTIC, BGA-275 |
| 文件頁數(shù)： | 1/43頁 |
| 文件大?。?/td> | 1280K |
| 代理商： | WEDPNF8M722V-1010BC |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WEDPNF8M722V-XBX
September 2002 Rev. 2
8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module
Multi-Chip Package
FEATURES
n Package:
275 Plastic Ball Grid Array (PBGA), 32mm x 25mm
n Commercial, Industrial and Military Temperature Ranges
n Weight:
WEDPNF8M722V-XBX - 2.5 grams typical
SDRAM PERFORMANCE FEATURES
n Organized as 8M x 72
n High Frequency = 100, 125MHz
n Single 3.3V ±0.3V power supply
n Fully Synchronous; all signals registered on positive
edge of system clock cycle
n Internal pipelined operation; column address can be
changed every clock cycle
n Internal banks for hiding row access/precharge
n Programmable Burst length 1,2,4,8 or full page
n 4096 refresh cycles
FLASH PERFORMANCE FEATURES
n User Configurable as 2Mx8, 1M x16 or 512K x 32
n Access Times of 100, 120, 150ns
n 3.3 Volt for Read and Write Operations
n 1,000,000 Erase/Program Cycles
ADVANCED*
n Sector Architecture
One 16KByte, two 8KBytes, one 32KByte, and fifteen
64KBytes in byte mode
One 8K word, two 4K words, one 16K word, and
fifteen 32K word sectors in word mode.
Any combination of sectors can be concurrently
erased. Also suppor ts full chip erase
n Boot Code Sector Architecture (Bottom)
n Embedded Erase and Program Algorithms
n Erase Suspend/Resume
Supports reading data from or programing data to a
sector not being erased
BENEFITS
n 44% SPACE SAVINGS
n Reduced part count
n Reduced I/O count
25% I/O Reduction
n Suitable for hi-reliability applications
n SDRAM Upgradeable to 16M x 72 density (contact
factory for information)
* This data sheet describes a product that may or may not be under
development and is subject to change or cancellation without notice.
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| WEDPNF8M722V-1015BC | SPECIALTY MEMORY CIRCUIT, PBGA275 |
| WEDPNF8M722V-1212BM | SPECIALTY MEMORY CIRCUIT, PBGA275 |
| WEDPNF8M722V-1012BC | SPECIALTY MEMORY CIRCUIT, PBGA275 |
| WEDPZ512K72S-133BC | 512K X 72 MULTI DEVICE SRAM MODULE, 4.2 ns, PBGA152 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WEDPNF8M722V-1010BI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M722V-1010BM | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M722V-1012BC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M722V-1012BI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M722V-1012BM | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package |
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