參數(shù)資料
型號(hào)： WEDPNF8M722V-1010BC
廠商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA275
封裝： 32 X 25 MM, PLASTIC, BGA-275
文件頁數(shù)： 40/43頁
文件大小： 1280K
代理商： WEDPNF8M722V-1010BC
6
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
White Electronic Designs
WEDPNF8M722V-XBX
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1, 3)
(VCC = +3.3V ±0.3V; TA = -55°C TO +125°C)
Parameter/Condition
Symbol
Units
Min
Max
Supply Voltage
VCC
3
3.6
V
Input High Voltage: Logic 1; All inputs (4)
VIH
0.7 x Vcc
VCC + 0.3
V
Input Low Voltage: Logic 0; All inputs (4)
VIL
-0.3
0.8
V
SDRAM
Input Leakage Current: Any input 0V - VIN - VCC
II
-5
5
A
(All other pins not under test = 0V)
SDRAM Input Leakage Address Current
(All other pins not under test = 0V)
II
-25
25
A
SDRAM Output Leakage Current: I/Os are disabled; 0V - VOUT - VCC
IOZ
-5
5
A
SDRAM Output High Voltage (IOUT = -4mA)
VOH
2.4
–
V
SDRAM Output Low Voltage (IOUT = 4mA)
VOL
–
0.4
V
Flash
Flash Input Leakage Current (VCC = 3.6, VIN = GND or VCC)
ILI
10
A
Flash Output Leakage Current (VCC = 3.6, VIN = GND or VCC)
ILOx8
10
A
Flash Output High Voltage (IOH = -2.0 mA, VCC = 3.0)
VOH1
0.85 X VCC
V
Flash Output Low Voltage (IOL = 5.8 mA, VCC = 3.0)
VOL
0.45
V
Flash Low VCC Lock-Out Voltage (5)
VLKO
2.3
2.5
V
NOTES:
1. All voltages referenced to VSS.
2. This parameter is not tested but guaranteed by design. f = 1 MHz, TA = 25°C.
3. An initial pause of 100ms is required after power-up, followed by two AUTO REFRESH commands, before proper device operation is ensured. (VCC must be
powered up simultaneously.) The two AUTO REFRESH command wake-ups should be repeated any time the tREF refresh requirement is exceeded.
4. VIH overshoot: VIH (MAX) = VCC + 2V for a pulse width
≤ 3ns, and the pulse width cannot be greater than one third of the cycle rate. VIL undershoot: VIL
(MIN) = -2V for a pulse width
≤ 3ns.
5. Guaranteed by design, but not tested.
ABSOLUTE MAXIMUM RATINGS
P
PP
PParameter
arameter
Unit
Supply Voltage Range (VCC)
-0.5 to +4.0
V
Signal Voltage Range
-0.5 to Vcc +0.5
V
Operating Temperature TA (Mil)
-55 to +125
°C
Operating Temperature TA (Ind)
-40 to +85
°C
Storage Temperature, Plastic
-65 to +150
°C
Flash Endurance (write/erase cycles)
1,000,000 min.
cycles
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those
indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
SDRAM CAPACITANCE (NOTE 2)
P
PP
PParameter
arameter
Symbol
Max
Unit
Input Capacitance: CLK
CI1
8pF
SDRAM Addresses, BA0-1 Input Capacitance
CA
32
pF
InputCapacitance:Allotherinput-onlypins
CI2
8pF
Input/Output Capacitance: I/Os
CIO
12
pF
Flash Address Capacitance
FA
15
pF
Flash Data Capacitance
FD
10
pF
FOE, FWE, RST
20
pF
FLASH DATA RETENTION
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data
150°C
10
Years
Retention Time
125°C
20
Years
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參數(shù)描述
WEDPNF8M722V-1010BI 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package
WEDPNF8M722V-1010BM 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package
WEDPNF8M722V-1012BC 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package
WEDPNF8M722V-1012BI 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package
WEDPNF8M722V-1012BM 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package
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