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參數(shù)資料
| 型號(hào)： | X28HT010W |
| 廠商： | INTERSIL CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V, Byte Alterable EEPROM |
| 中文描述： | 128K X 8 EEPROM 5V, 200 ns, UUC |
| 封裝： | WAFER |
| 文件頁數(shù)： | 14/20頁 |
| 文件大?。?/td> | 444K |
| 代理商： | X28HT010W |
14
FN8105.1
February 12, 2007
Page Write Cycle
NOTES:
6. Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and WE HIGH to fetch
data from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively performing a polling operation.
7. The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform to either the
CE or WE controlled write cycle timing.
DATA Polling Timing Diagram
(Note 8)
WE
OE
(Note 5)
Last Byte
Byte 0
Byte 1
Byte 2
Byte n
Byte n+1
Byte n+2
t
WP
t
WPH
t
BLC
t
WC
CE
Address*
(Note 7)
I/O
*For each successive write within the page write operation, A
8
-A
16
should be the same or
writes to an unknown address could occur.
Address
A
n
D
IN
= X
t
WC
t
OEH
t
OES
A
n
A
n
CE
WE
OE
I/O
7
t
DW
D
OUT
= X
D
OUT
= X
X28C010, X28HT010
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|---|---|
| X28HT512 | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:High Temperature, 5 Volt, Byte Alterable E2PROM |
| X28HT512D-20 | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:High Temperature, 5 Volt, Byte Alterable E2PROM |
| X28HT512D-25 | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:High Temperature, 5 Volt, Byte Alterable E2PROM |
| X28HT512F-20 | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:High Temperature, 5 Volt, Byte Alterable E2PROM |
| X28HT512F-25 | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:High Temperature, 5 Volt, Byte Alterable E2PROM |
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