參數(shù)資料
型號: XP134A01A9SR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: Power MOS FET
中文描述: 功率MOS場效應管
文件頁數(shù): 4/4頁
文件大?。?/td> 67K
代理商: XP134A01A9SR
u
Drain/Source Voltage vs. Capacitance
Vgs=0V, f=1MHz
C
Drain/Source Voltage:Vds (V)
Switching Time vs. Drain Current
Vgs=-5V, Vdd
-10V, PW=10
μ
sec. duty
1%
S
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
Vds=-10V, Id=-3.5A
G
Gate Charge:Qg (nc)
Reverse Drain Current vs. Source/Drain Voltage
Pulse Test
R
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Rth (ch-a)=62.5C/W, (Implemented on a glass epoxy PCB)
S
(
Pulse Width:PW (sec)
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