參數(shù)資料
型號: 28F001BX-T
廠商: Intel Corp.
英文描述: 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
中文描述: 1兆位(128K的× 8)引導塊閃存
文件頁數(shù): 18/33頁
文件大?。?/td> 436K
代理商: 28F001BX-T
28F001BX-T/28F001BX-B
DC CHARACTERISTICS
V
CC
e
5.0V
g
10%, T
A
e b
40
§
C to
a
85
§
C
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
I
IL
Input Load Current
1
g
1.0
m
A V
CC
e
V
CC
Max
V
IN
e
V
CC
or GND
m
A V
CC
e
V
CC
Max
V
OUT
e
V
CC
or GND
mA V
CC
e
V
CC
Max
CE
Y
e
RP
Y
e
V
IH
m
A V
CC
e
V
CC
Max
CE
Y
e
RP
Y
e
V
CC
g
0.2V
m
A RP
Y
e
GND
g
0.2V
mA V
CC
e
V
CC
Max, CE
Y
e
V
IL
f
e
8 MHz, I
OUT
e
0 mA
I
LO
Output Leakage Current
1
g
10
I
CCS
V
CC
Standby Current
1.2
2.0
30
150
I
CCD
V
CC
Deep Power-Down Current
1
0.05
2.0
I
CCR
V
CC
Read Current
1
13
35
I
CCP
V
CC
Programming Current
1
5
20
mA Programming in Progress
I
CCE
V
CC
Erase Current
1
6
20
mA Erase in Progress
I
CCES
V
CC
Erase Suspend Current
1, 2
5
10
mA Erase Suspended
CE
Y
e
V
IH
m
A V
PP
s
V
CC
m
A V
PP
l
V
CC
m
A RP
Y
e
GND
g
0.2V
m
A V
PP
e
V
PPH
Programming in Progress
I
PPS
V
PP
Standby Current
1
g
1
g
15
90
400
I
PPD
V
PP
Deep Power-Down Current
1
0.80
1.0
I
PPP
V
PP
Programming Current
1
6
30
I
PPE
V
PP
Erase Current
1
6
30
mA V
PP
e
V
PPH
Erase in Progress
I
PPES
V
PP
Erase Suspend Current
1
90
400
m
A V
PP
e
V
PPH
Erase Suspended
I
ID
A
9
Intelligent Identifier Current
1
90
500
m
A A
9
e
V
ID
V
IL
Input Low Voltage
b
0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
a
0.5 V
V
OL
Output Low Voltage
0.45
V V
CC
e
V
CC
Min
I
OL
e
5.8 mA
V V
CC
e
V
CC
Min
I
OH
e
2.5 mA
V V
CC
e
V
CC
Min
I
OH
e b
2.5
m
A
V
CC
e
V
CC
Min
I
OH
e b
100
m
A
V
OH1
Output High Voltage (TTL)
2.4
V
OH2
Output High Voltage (CMOS)
0.85 V
CC
V
CC
b
0.4
V
ID
A
9
Intelligent Identifier Voltage
11.5
13.0
V
V
PPL
V
PP
during Normal Operations
3
0.0
6.5
V
V
PPH
V
PP
during Prog/Erase Operations
11.4
12.0
12.6
V
V
LKO
V
CC
Erase/Write Lock Voltage
RP
Y
, OE
Y
Unlock Voltage
2.5
V
V
HH
11.4
12.6
V Boot Block Prog/Erase
18
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