參數(shù)資料
型號(hào)： 28F016S5
廠商： Intel Corp.
英文描述： 16-MBIT 5V FlashFile Memory(16M位5V閃速存儲(chǔ)器)
中文描述： 16兆內(nèi)存5V的FlashFile（1,600位5V的閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 28/38頁(yè)
文件大?。?/td> 427K
代理商： 28F016S5
28F004S5, 28F008S5, 28F016S5
E
28
PRELIMINARY
6.4
DC Characteristics
— Commercial Temperature
(Continued)
5.0 V V
CC
Test
Sym
Parameter
Notes
Min
Max
Unit
Conditions
V
IL
Input Low Voltage
7
–0.5
0.8
V
V
IH
Input High Voltage
7
2.0
V
CC
+ 0.5
V
V
OL
Output Low Voltage
3,7
0.45
V
V
CC
= V
Min
I
OL
= 5.8 mA
V
OH1
Output High Voltage
(TTL)
3,7
2.4
V
V
CC
= V
CC
Min
I
OH
= –2.5 mA
V
OH2
Output High Voltage
(CMOS)
3,7
0.85
V
CC
V
V
CC
= V
CC
Min
I
OH
= –2.5 mA
V
CC
–0.4
V
V
CC
= V
CC
Min
I
OH
= –100 μA
V
PPLK
V
PP
Lockout Voltage
4,7
1.5
V
V
PPH1
V
PP
Voltage
4.5
5.5
V
V
PPH2
V
PP
Voltage
11.4
12.6
V
V
LKO
V
CC
Lockout Voltage
2.0
V
V
HH
RP# Unlock Voltage
8,9
11.4
12.6
V
Set Master Lock-Bit
Override Lock-Bit
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominal V
CC
voltage and T
A
= +25
°
C. These currents are
valid for all product versions (packages and speeds).
2. I
CCWS
and I
CCES
are specified with the device de-selected. If read or written while in erase suspend mode, the device’s
current is the sum of I
CCWS
or I
CCES
and I
CCR
or I
CCW
.
3. Includes RY/BY#.
4. Block erases, programs, and lock-bit configurations are inhibited when V
PP
≤
V
PPLK
, and not guaranteed in the range
between V
PPLK
(max) and V
PPH1
(min), between V
PPH1
(max) and V
PPH2
(min), and above V
PPH2
(max).
5. Automatic Power Savings (APS) reduces typical I
CCR
to 1 mA
in static operation.
6. CMOS inputs are either V
CC
± 0.2 V or GND ± 0.2 V. TTL inputs are either V
IL
or V
IH
.
7. Sampled, not 100% tested.
8. Master lock-bit set operations are inhibited when RP# = V
IH
. Block lock-bit configuration operations are inhibited when the
master lock-bit is set and RP# = V
IH
. Block erases and programs are inhibited when the corresponding block-lock bit is set
and RP# = V
IH
. Block erase, program, and lock-bit configuration operations are not guaranteed and should not be
attempted with V
IH
< RP# < V
HH
.
9. RP# connection to a V
HH
supply is allowed for a maximum cumulative period of 80 hours.
相關(guān)PDF資料
PDF描述
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參數(shù)描述
28F016SA 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
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28F016SA-070 制造商:undefined 功能描述:
28F016SC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F016SC - BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT
28F016SV 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
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