參數(shù)資料
型號(hào)： 28F0101024K
廠商： Intel Corp.
英文描述： 28F010 1024K (128K X 8) CMOS FLASH MEMORY
中文描述： 28F010 1024K（128K的× 8）的CMOS閃存
文件頁(yè)數(shù)： 1/33頁(yè)
文件大?。?/td> 895K
代理商： 28F0101024K
E
December 1997
Order Number: 290207-012
8
n
Flash Electrical Chip-Erase
1 Second Typical Chip-Erase
n
Quick-Pulse Programming Algorithm
10 μs Typical Byte-Program
2 Second Chip-Program
n
100,000 Erase/Program Cycles
n
12.0 V ±5% V
PP
n
High-Performance Read
90 ns Maximum Access Time
n
CMOS Low Power Consumption
10 mA Typical Active Current
50 μA Typical Standby Current
0 Watts Data Retention Power
n
Integrated Program/Erase Stop Timer
n
Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
n
Noise Immunity Features
±10% V
CC
Tolerance
Maximum Latch-Up Immunity
through EPI Processing
n
ETOX Nonvolatile Flash Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
n
JEDEC-Standard Pinouts
32-Pin Plastic Dip
32-Lead PLCC
32-Lead TSOP
(See Packaging Spec., Order #231369)
n
Extended Temperature Options
Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-
board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases
memory flexibility, while contributing to time and cost savings.
The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Intel’s 28F010 is
offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC
standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel's ETOX (EPROM Tunnel Oxide)
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V V
PP
supply, the
28F010 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse
programming and quick-erase algorithms.
Intel's 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds,
low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance
for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 μA translates into
power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved
through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on
address and data pins, from –1 V to V
CC
+ 1 V.
With Intel's ETOX process technology base, the 28F010 builds on years of EPROM experience to yield the
highest levels of quality, reliability, and cost-effectiveness.
28F010 1024K (128K X 8) CMOS
FLASH MEMORY
相關(guān)PDF資料
PDF描述
28F010 1024K (128K x 8) CMOS FLASH MEMORY
28F016B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F032B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F160B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F800B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F010120EI 制造商:Advanced Micro Devices 功能描述:
28F010-120EI 制造商:undefined 功能描述:
28F010120JC 制造商: 功能描述: 制造商:Advanced Micro Devices 功能描述: 制造商:undefined 功能描述:
28F010-120JC 制造商:undefined 功能描述:
28F0121-0SR 功能描述:FERRITE 10A 48 OHM SMD RoHS:否 類別:濾波器 >> 鐵氧體磁珠和芯片 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:EMI1812 頻率對(duì)應(yīng)阻抗:120 歐姆 @ 100MHz 額定電流:200mA DC 電阻(DCR):最大 400 毫歐 濾波器類型:差模 - 單線 封裝/外殼:1812（4532 公制） 安裝類型:表面貼裝 包裝:帶卷 (TR) 高度（最大）:0.069"（1.75mm） 尺寸/尺寸:0.177" L x 0.126" W（4.50mm x 3.20mm） 其它名稱:Q1712807A
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