參數(shù)資料
型號(hào)： 28F010
廠商： Intel Corp.
英文描述： 1024K (128K x 8) CMOS FLASH MEMORY
中文描述： 1024K（128K的× 8）的CMOS閃存
文件頁(yè)數(shù)： 1/30頁(yè)
文件大?。?/td> 405K
代理商： 28F010
*
Other brands and names are the property of their respective owners.
Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.
November 1995
COPYRIGHT
INTEL CORPORATION, 1995
Order Number: 290207-010
28F010
1024K (128K x 8) CMOS FLASH MEMORY
Y
Flash Electrical Chip-Erase
D 1 Second Typical Chip-Erase
Y
Quick Pulse Programming Algorithm
D 10
m
s Typical Byte-Program
D 2 Second Chip-Program
Y
100,000 Erase/Program Cycles
Y
12.0V
g
5% V
PP
Y
High-Performance Read
D 65 ns Maximum Access Time
Y
CMOS Low Power Consumption
D 10 mA Typical Active Current
D 50
m
A Typical Standby Current
D 0 Watts Data Retention Power
Y
Integrated Program/Erase Stop Timer
Y
Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
Y
Noise Immunity Features
D
g
10% V
CC
Tolerance
D Maximum Latch-Up Immunity
through EPI Processing
Y
ETOX
TM
Nonvolatile Flash Technology
D EPROM-Compatible Process Base
D High-Volume Manufacturing
Experience
Y
JEDEC-Standard Pinouts
D 32-Pin Plastic Dip
D 32-Lead PLCC
D 32-Lead TSOP
(See Packaging Spec., Order
Y
231369)
Y
Extended Temperature Options
Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-
board during subassembly test; in-system during final test; and in-system after-sale. The 28F010 increases
memory flexibility, while contributing to time and cost savings.
The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of 8 bits. Intel’s 28F010 is
offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC
standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel’s ETOX (EPROM Tunnel Oxide) process
technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field combine to
extend reliable cycling beyond that of traditional EEPROMs. With the 12.0V V
PP
supply, the 28F010 performs
100,000 erase and program cycles well within the time limits of the Quick Pulse Programming and Quick Erase
algorithms.
Intel’s 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds, low
power consumption, and immunity to noise. Its 65 nanosecond access time provides no-WAIT-state perform-
ance for a wide range of microprocessors and microcontrollers. Maximum standby current of 100
m
A trans-
lates into power savings when the device is deselected. Finally, the highest degree of latch-up protection is
achieved through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA
on address and data pins, from
b
1V to V
CC
a
1V.
With Intel’s ETOX process base, the 28F010 builds on years of EPROM experience to yield the highest levels
of quality, reliability, and cost-effectiveness.
相關(guān)PDF資料
PDF描述
28F016B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F032B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F160B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
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28F016SA16-MBIT Evaluation Kit/Evaluation System for the MAX5954L/MAX5954A
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參數(shù)描述
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28F010-120JC 制造商:undefined 功能描述:
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