參數(shù)資料
型號: 28F016S5
廠商: Intel Corp.
英文描述: 16-MBIT 5V FlashFile Memory(16M位5V閃速存儲器)
中文描述: 16兆內(nèi)存5V的FlashFile(1,600位5V的閃速存儲器)
文件頁數(shù): 31/38頁
文件大?。?/td> 427K
代理商: 28F016S5
E
6.5
T
A
= 0 °C to +70 °C
28F004S5, 28F008S5, 28F016S5
31
PRELIMINARY
AC Characteristics
— Read-Only Operations
(1, 4)
—Commercial Temperature
5 V ± 5% V
CC
–85
(5)
Versions
(4)
5 V ± 10% V
CC
–90/–100
(6)
–120
(6)
#
Sym
Parameter
Notes Min
Max
Min
Max
Min
Max
Unit
R1
t
AVAV
Read Cycle Time
4, 8 Mbit
85
90
120
ns
16 Mbit
85
100
120
ns
R2
t
AVQV
Address to Output
4, 8 Mbit
85
90
120
ns
16 Mbit
85
100
120
ns
R3
t
ELQV
CE# to Output Delay
4, 8 Mbit
2
85
90
120
ns
16 Mbit
2
85
100
120
ns
R4
t
GLQV
OE# to Output Delay
2
40
45
50
ns
R5
t
PHQV
RP# High to Output Delay
400
400
400
ns
R6
t
ELQX
CE# to Output in Low Z
3
0
0
0
ns
R7
t
GLQX
OE# to Output in Low Z
3
0
0
0
ns
R8
t
EHQZ
CE# High to Output in High Z
3
55
55
55
ns
R9
t
GHQZ
OE# High to Output in High Z
3
10
10
15
ns
R10
t
OH
Output Hold from Address, CE#
or OE# Change, Whichever
Occurs First
3
0
0
0
ns
NOTES:
1.
2.
3.
4.
5.
See AC Input/Output Reference Waveform for maximum allowable input slew rate.
OE# may be delayed up to t
ELQV
-t
GLQV
after the falling edge of CE# without impact on t
ELQV
.
Sampled, not 100% tested.
See Ordering Informationfor device speeds (valid operational combinations).
See Transient Input/Output Reference Waveformand Transient Equivalent Testing Load Circuit (High Speed
Configuration)for testing characteristics.
See Transient Input/Output Reference Waveformand Transient Equivalent Testing Load Circuit (Standard Configuration)
for testing characteristics.
6.
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