參數(shù)資料
型號: 28F016S5
廠商: Intel Corp.
英文描述: 16-MBIT 5V FlashFile Memory(16M位5V閃速存儲器)
中文描述: 16兆內(nèi)存5V的FlashFile(1,600位5V的閃速存儲器)
文件頁數(shù): 35/38頁
文件大小: 427K
代理商: 28F016S5
E
6.7
28F004S5, 28F008S5, 28F016S5
35
PRELIMINARY
Block Erase, Program, and Lock-Bit Configuration Performance
(3,4,5)
Commercial Temperature
V
CC
= 5 V ± 0.5 V, 5 V ± 0.25 V, T
A
= 0 °C to +70 °C
5 V V
PP
12 V V
PP
#
Sym
Parameter
Notes
Typ
(1)
Max
Typ
(1)
Max
Unit
W16
t
WHRH1
t
EHRH1
Program Time
2
8
150
6
100
μs
Block Program Time
2
0.5
1.5
0.4
1
sec
W16
t
WHRH2
t
EHRH2
Block Erase Time
2
0.4
5
0.3
4
sec
W16
t
WHRH3
t
EHRH3
Set Lock-Bit Time
2
12
TBD
10
TBD
μs
W16
t
WHRH4
t
EHRH4
Clear Block Lock-Bits Time
2
1.1
TBD
1
TBD
sec
W16
t
WHRH5
t
EHRH5
Program Suspend Latency
Time
5
6
4
5
μs
W16
t
WHRH5
t
EHRH5
Erase Suspend Latency Time
9.6
12
9.6
12
μs
NOTES:
1.
Typical values measured at T
= +25 °C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
Excludes system-level overhead.
These performance numbers are valid for all speed versions.
Sampled, but not 100% tested.
Reference the
AC Waveform for Write Operations
, Figure 17.
2.
3.
4.
5.
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