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參數資料
| 型號： | 2N6277 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP POWER SILICON TRANSISTOR |
| 中文描述： | 50 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 封裝： | TO-3, 2 PIN |
| 文件頁數： | 4/6頁 |
| 文件大?。?/td> | 169K |
| 代理商： | 2N6277 |
4
Motorola Bipolar Power Transistor Device Data
V
300
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
10
0.5
100
70
50
30
20
Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (AMP)
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VBE(sat) @ IC/IB = 4.0 V
V
+12
Figure 10. “On” Voltages
IC, COLLECTOR CURRENT (AMP)
θ
°
+10
+8.0
+6.0
+ 4.0
–2.0
*
θ
VC for VCE(sat)
*APPLIES FOR IC/IB <
hFE@ VCE
4.0 V
4
4.0
Figure 11. Temperature Coefficients
IB, BASE CURRENT (AMPS)
0
0.01
0.8
1.2
0.4
1.6
TJ = 25
°
C
5.0 A
10 A
30 A
103
Figure 12. Collector Cut–Off Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
102
101
100
10–1
Figure 13. Base Cut–off Region
200
h
TJ = 150
°
C
+ 25
°
C
–55
°
C
VCE = 4.0 V
VCE = 10 V
,
I
10–2
–0.1
0
+0.1
+0.2
+0.3
+0.4
VCE = 100 V
TJ = 150
°
C
100
°
C
25
°
C
REVERSE
FORWARD
500
700
1000
0.7
1.0
2.0
3.0
7.0
10
20
5.0
30
50
0.02
0.05
0.1
0.2
0.5
1.0 2.0
5.0
10
2.0
2.4
2.8
3.2
3.6
0
+ 2.0
0.5
0.7
1.0
2.0
3.0
7.0
10
20
5.0
30
50
0.5 0.7
1.0
2.0
3.0
7.0
10
20
5.0
30
50
θ
VB for VBE
–55
°
C TO + 25
°
C
+ 25
°
C TO + 150
°
C
VCE(sat)
@ IC/IB = 10
IC =
ICES
TJ = 150
°
C
100
°
C
25
°
C
VCE = 100 V
REVERSE
FORWARD
10–3
102
101
100
10–1
10–2
–0.1
0
+0.1
+0.2
+0.3
+0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
0
0.8
1.2
0.4
1.6
2.0
2.4
2.8
,
I
μ
IC =
2.0 A
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