參數(shù)資料
型號(hào): 2N6277
廠(chǎng)商: MICROSEMI CORP-LAWRENCE
元件分類(lèi): 功率晶體管
英文描述: PNP POWER SILICON TRANSISTOR
中文描述: 50 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-204AE
封裝: TO-3, 2 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 169K
代理商: 2N6277
2
Motorola Bipolar Power Transistor Device Data
(VCE = 60 Vdc, IB = 0)
2N6274
2N6275
120
(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150 C)
2N6275
50
Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)
IC = 20 Adc, VCE = 4.0 Vdc)
IEBO
1.0
100
mAdc
μ
Adc
IC = 50 Adc, IB = 10 Adc)
30
10
120
Base–Emitter Saturation Voltage
VBE(sat)
3.0
Vdc
Current–Gain Bandwidth Product (2)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc)
Fall Time
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
(2) fT = |hfe|
ftest
Cob
30
600
MHz
pF
tr
0.35
μ
s
tf
0.25
μ
s
2.0%.
VCC
+ 80 V
RC
4.0 OHMS
RB
10 OHMS
tr, tf
10 ns
DUTY CYCLE = 0.5%
30
μ
s
+ 21.5 V
0
– 18.5 V
1N3879
– 4.0 V
Figure 2. Switching Time Test Circuit
0.5
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t
μ
2.0
0.7
1.0
2.0
3.0
5.0 7.0 10
50
tr @ VCC = 80 V
td @ VBE(off) = 5.0 V
IC/IB = 10
TJ = 25
°
C
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
20
30
NOTE: For information of Figures 3 and 6 , RB and RC were
NOTE:
varied to obtain desired test conditions.
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