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參數(shù)資料
| 型號： | 2N6288 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Plastic Power Transistor(7A，40W，30V（集電極-發(fā)射極），塑料，補(bǔ)償型硅NPN功率晶體管) |
| 中文描述： | 7 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 129K |
| 代理商： | 2N6288 |
2N6107 2N6109 2N6111 2N6288 2N6292
http://onsemi.com
4
Figure 2. Switching Time Test Circuit
+11 V
25
μ
s
0
9.0 V
R
B
4 V
D
1
SCOPE
V
CC
+30 V
R
C
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
R
B
and R
C
ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
2.0
0.07
Figure 3. Turn
On Time
I
C
, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.02
0.1
0.2
0.3
0.5
2.0
3.0
7.0
T
J
= 25
°
C
V
CC
= 30 V
I
C
/I
B
= 10
0.05
t
t
r
1.0
5.0
t
d
@ V
BE(off)
≈
5.0 V
0.03
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.7
0.01
0.01
0.5
0.2
0.1
0.07
0.05
0.02
r
0.05
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
θ
JC(t)
= r(t) R
θ
JC
R
θ
JC
= 3.125
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
Z
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.3
0.03
0.02
0.1
0.5
0.2
15
10
1.0
Figure 5. Active
Region Safe Operating Area
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
7.0
5.0
2.0
0.15
5.0
10
CURRENT LIMIT
SECONDARY
BREAKDOWN LIMIT
THERMAL LIMIT
@ T
C
= 25
°
C (SINGLE PULSE)
7.0
I
dc
0.1 ms
1.0
0.7
0.5
0.2
0.3
2.0
3.0
0.5 ms
20
30
50
70
100
3.0
0.1
ms
5.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6288 LEDFREE | 功能描述:兩極晶體管 - BJT NPN Pwr SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6288G | 功能描述:兩極晶體管 - BJT 7A 30V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6289 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS |
| 2N629 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:GE PNP POWER BJT |
| 2N6290 | 功能描述:兩極晶體管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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