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參數(shù)資料
| 型號(hào)： | 2N6288 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Plastic Power Transistor(7A，40W，30V（集電極-發(fā)射極），塑料，補(bǔ)償型硅NPN功率晶體管) |
| 中文描述： | 7 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 129K |
| 代理商： | 2N6288 |
2N6107 2N6109 2N6111 2N6288 2N6292
http://onsemi.com
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Notes
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6292 | Complementary Silicon Plastic Power Transistor(7A，40W，70V（集電極-發(fā)射極），塑料，補(bǔ)償型硅NPN功率晶體管) |
| 2N6303 | Silicon PNP Power Transistors |
| 2N6304 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| 2N6323 | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2N6324 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 30A I(C) | TO-210AE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6288 LEDFREE | 功能描述:兩極晶體管 - BJT NPN Pwr SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6288G | 功能描述:兩極晶體管 - BJT 7A 30V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6289 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS |
| 2N629 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:GE PNP POWER BJT |
| 2N6290 | 功能描述:兩極晶體管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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