參數(shù)資料
型號: 2N7002
廠商: ELAN Microelctronics Corp .
英文描述: N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V,開態(tài)漏極電流0.5A,N溝道增強(qiáng)型垂直DMOS場效應(yīng)管)
中文描述: N溝道增強(qiáng)型場效應(yīng)管垂直的DMOS(擊穿電壓60V的,開態(tài)漏極電流為0.5A,?溝道增強(qiáng)型垂直的DMOS場效應(yīng)管)
文件頁數(shù): 2/4頁
文件大?。?/td> 30K
代理商: 2N7002
7-10
2N7002
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
0.36W
θ
jc
°
C/W
200
θ
ja
°
C/W
350
I
DR
*
I
DRM
TO-236AB
*
I
D
(continuous) is limited by max rated T
j
.
115mA
800mA
115mA
800mA
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
60
V
I
D
= 10
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 250
μ
A, V
GS
= V
DS
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 50mA
V
GS
= 10V, I
D
= 0.5A
V
GS
= 10V, I
D
= 0.5A
V
DS
= 25V, I
D
= 0.5A
Gate Threshold Voltage
1.0
2.5
V
Change in V
GS(th)
with Temperature
Gate Body Leakage
-5.5
mV/
°
C
±
100
nA
Zero Gate Voltage Drain Current
1
μ
A
μ
A
500
I
D(ON)
R
DS(ON)
ON-State Drain Current
500
mA
7.5
7.5
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.0
%/
°
C
80
m
Input Capacitance
50
Common Source Output Capacitance
25
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
Reverse Transfer Capacitance
5
Turn-ON Time
20
ns
Turn-OFF Time
20
Diode Forward Voltage Drop
1.2
V
I
SD
= 0.2A, V
GS
= 0V
I
SD
= 0.8A, V
GS
= 0V
Reverse Recovery Time
400
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 25
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
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