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參數(shù)資料
| 型號： | 2N7002PV |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 60 V, 350 mA dual N-channel Trench MOSFET |
| 中文描述： | 350 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 160K |
| 代理商： | 2N7002PV |
2N7002PV
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
11 of 16
NXP Semiconductors
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
9. Package outline
Fig 18. Package outline SOT666
UNIT
b
p
c
D
E
e
1
H
E
L
p
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
IEC
JEDEC
JEITA
mm
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
0.5
e
1.0
1.7
1.5
0.1
y
0.1
DIMENSIONS (mm are the original dimensions)
0.3
0.1
SOT666
bp
pin 1 index
D
e1
e
A
Lp
detail X
HE
E
A
S
0
1
2 mm
scale
A
0.6
0.5
c
X
1
2
3
4
5
6
Plastic surface-mounted package; 6 leads
SOT666
Y S
w
M
A
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2N7002PV,115 | 功能描述:MOSFET MOSFET N-CH DUAL 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002PW | 制造商:NXP Semiconductors 功能描述:MOSFETN CH60V0.3ASOT323 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,60V,0.3A,SOT323 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,60V,0.3A,SOT323; Transistor Polarity:N Channel; Continuous Drain Current Id:310mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.75V; No. of Pins:3 ;RoHS Compliant: Yes |
| 2N7002PW,115 | 功能描述:MOSFET 60V 0.3A N-CHANNEL TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002Q-7-F | 制造商:Diodes Incorporated 功能描述:2N7002 FAMILY SOT23 T&R 3K - Tape and Reel |
| 2N7002S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SURFACE MOUNT Dual N-Channel Enhancement MOS FET / VOLTAGE 60 Volts CURRENT 0.250 Ampere |
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