參數(shù)資料
型號: 2N7002PV
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 60 V, 350 mA dual N-channel Trench MOSFET
中文描述: 350 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: ULTRA SMALL, PLASTIC PACKAGE-6
文件頁數(shù): 7/16頁
文件大?。?/td> 160K
代理商: 2N7002PV
2N7002PV
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
7 of 16
NXP Semiconductors
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
T
amb
= 25
°
C
T
amb
= 25
°
C; V
DS
= 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6.
Per transistor: Output characteristics: drain
current as a function of drain-source voltage;
typical values
Fig 7.
Per transistor: Sub-threshold drain current as
a function of gate-source voltage
T
amb
= 25
°
C
(1) V
GS
= 3.25 V
(2) V
GS
= 3.5 V
(3) V
GS
= 4 V
(4) V
GS
= 5 V
(5) V
GS
= 10 V
Fig 8.
Per transistor: Drain-source on-state
resistance as a function of drain current;
typical values
I
D
= 500 mA
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
Fig 9.
Per transistor: Drain-source on-state
resistance as a function of gate-source
voltage; typical values
V
DS
(V)
0.0
4.0
3.0
1.0
2.0
017aaa017
0.4
0.5
0.3
0.2
0.1
0.6
0.7
I
D
(A)
0.0
3.5 V
V
GS
= 4.0 V
3.0 V
2.75 V
2.5 V
3.25 V
017aaa018
V
GS
(V)
0
3
2
1
10
4
10
5
10
3
I
D
(A)
10
6
(2)
(1)
(3)
I
D
(A)
0.0
1.0
0.8
0.4
0.6
0.2
017aaa019
5.0
2.5
7.5
10.0
R
DSon
(
Ω
)
0.0
(2)
(1)
(3)
(4)
(5)
V
GS
(V)
0.0
10.0
8.0
4.0
6.0
2.0
017aaa020
2.0
4.0
6.0
R
DSon
(
Ω
)
0.0
(1)
(2)
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