參數(shù)資料
型號(hào)： 2N7002PV
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 60 V, 350 mA dual N-channel Trench MOSFET
中文描述： 350 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： ULTRA SMALL, PLASTIC PACKAGE-6
文件頁(yè)數(shù)： 6/16頁(yè)
文件大?。?/td> 160K
代理商： 2N7002PV
2N7002PV
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
6 of 16
NXP Semiconductors
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
7. Characteristics
Table 7.
T
j
= 25
°
C unless otherwise specified.
Symbol
Parameter
Per transistor
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
gate-source threshold
voltage
I
DSS
drain leakage current
[1]
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.01.
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 10
μ
A; V
GS
= 0 V
60
-
-
V
I
D
= 250
μ
A; V
DS
= V
GS
1.1
1.75
2.4
V
V
DS
= 60 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
=
±
20 V; V
DS
= 0 V
-
-
-
-
-
-
1
10
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate leakage current
drain-source on-state
resistance
[1]
V
GS
= 5 V; I
D
= 50 mA
V
GS
= 10 V; I
D
= 500 mA
V
DS
= 10 V; I
D
= 200 mA
-
-
1.3
1
400
2
1.6
-
Ω
Ω
mS
g
fs
forward
transconductance
[1]
-
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
I
D
= 300 mA;
V
DS
= 30 V;
V
GS
= 4.5 V
-
-
-
-
-
-
0.6
0.2
0.2
30
7
4
0.8
-
-
50
-
-
nC
nC
nC
pF
pF
pF
V
GS
= 0 V; V
DS
= 10 V;
f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
Source-drain diode
V
SD
V
DD
= 50 V;
R
L
= 250
Ω
;
V
GS
= 10 V;
R
G
= 6
Ω
-
-
-
-
3
4
10
5
6
-
20
-
ns
ns
ns
ns
source-drain voltage
I
S
= 115 mA; V
GS
= 0 V
0.47
0.75
1.1
V
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