參數(shù)資料
型號: 2N7002PV
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 60 V, 350 mA dual N-channel Trench MOSFET
中文描述: 350 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: ULTRA SMALL, PLASTIC PACKAGE-6
文件頁數(shù): 4/16頁
文件大小: 160K
代理商: 2N7002PV
2N7002PV
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
4 of 16
NXP Semiconductors
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Per transistor
R
th(j-a)
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
I
DM
= single pulse
(1) t
p
= 100
μ
s
(2) t
p
= 1 ms
(3) t
p
= 10 ms
(4) DC; T
sp
= 25
°
C
(5) t
p
= 100 ms
(6) DC; T
amb
= 25
°
C; drain mounting pad 1 cm
2
Fig 3.
Per transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
017aaa063
10
1
10
2
1
10
I
D
(A)
10
3
V
DS
(V)
10
1
10
2
10
1
(1)
(2)
(3)
(4)
(5)
(6)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to ambient
in free air
[1]
-
330
280
-
380
320
115
K/W
K/W
K/W
[2]
-
R
th(j-sp)
thermal resistance from
junction to solder point
-
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
-
-
250
K/W
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