參數資料
型號: 2N7002PV
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 60 V, 350 mA dual N-channel Trench MOSFET
中文描述: 350 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: ULTRA SMALL, PLASTIC PACKAGE-6
文件頁數: 5/16頁
文件大?。?/td> 160K
代理商: 2N7002PV
2N7002PV
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
5 of 16
NXP Semiconductors
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
FR4 PCB, standard footprint
Fig 4.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
FR4 PCB, mounting pad for drain 1 cm
2
Fig 5.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
017aaa064
t
p
(s)
10
3
10
2
10
3
10
1
10
2
10
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
017aaa065
t
p
(s)
10
3
10
2
10
3
10
1
10
2
10
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
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