參數(shù)資料
型號: 2SC5704
英文描述: Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
中文描述: 晶體管
文件頁數(shù): 4/9頁
文件大?。?/td> 63K
代理商: 2SC5704
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE662M16
Input Power, Pin (dBm)
Output
Power,
P
out
(dBm)
Output
Power,
P
out
(dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
VCE = 2 V
f = 1 GHz
30
25
5
10
15
20
0
110
100
MSG
|S21e|
2
VCE = 2 V, f = 1 GHz
Icq = 20 mA (RF OFF)
30
20
10
0
-10
50
40
20
30
10
-25
-15
5
Pout
IC
VCE = 2 V, f = 2 GHz
Icq = 20 mA (RF OFF)
30
20
10
0
-10
50
40
20
30
10
-25
-15
5
Pout
IC
VCE = 1 V
IC = 20 mA
35
20
25
30
5
10
15
0
0.1
1
10
VCE = 2 V
IC = 20 mA
35
20
25
30
5
10
15
0
0.1
1
10
VCE = 2 V
f = 2 GHz
30
25
5
10
15
20
0
110
100
MAG
MSG
|S21e|
2
Collector Current, IC (mA)
Insertion
Power
Gain,
IS
21e
I2
(dB)
Maximum
Available
Gain,
MAG
(dB)
Maximum
Stable
Gain,
MSG
(dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Collector Current, IC (mA)
Insertion
Power
Gain,
IS
21e
I2
(dB)
Maximum
Available
Gain,
MAG
(dB)
Maximum
Stable
Gain,
MSG
(dB)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
Frequency, f (GHz)
Insertion
Power
Gain,
IS
21e
I2
INSERTION POWER GAIN
vs. FREQUENCY
Frequency, f (GHz)
Insertion
Power
Gain,
IS
21e
I2
INSERTION POWER GAIN
vs. FREQUENCY
Collector
Current,
I
c(mA)
Collector
Current,
I
c(mA)
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2SC5706-E 功能描述:兩極晶體管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5706-H 功能描述:兩極晶體管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5706-P-E 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5706-P-TL-E 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5706-TL-E 功能描述:兩極晶體管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2