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參數(shù)資料
| 型號： | 2SK2613 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII) |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型（喝醉MOSIII） |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 232K |
| 代理商： | 2SK2613 |
2SK2613
2002-08-09
6
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
相關(guān)PDF資料 |
PDF描述 |
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| 2SK2614 | High Speed,High Current Switching Application N Channel MOSFET(高速大電流轉(zhuǎn)換用 N溝道 MOS場效應(yīng)管) |
| 2SK2615 | High Speed,High Current Switching Application N Channel MOSFET(高速大電流轉(zhuǎn)換用 N溝道 MOS場效應(yīng)管) |
| 2SK2616 | Ultrahigh-Speed Switching Applications |
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| 2SK2638-01MR | TRANS PREBIASED PNP 200MW SOT-23 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2613(F) | 功能描述:MOSFET MOSFET N-Ch 1000V 8A Rdson 1.7 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2614 | 功能描述:MOSFET N-Ch 50V 20A Rdson 0.046 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2614(Q) | 功能描述:MOSFET N-Ch 50V 20A Rdson 0.046 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2614(TE16L1) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 50V 20A 3-Pin(2+Tab) Case DP T/R |
| 2SK2614(TE16L1,Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 50V 20A 3-Pin(2+Tab) Case DP T/R 制造商:Toshiba 功能描述:Trans MOSFET N-CH 50V 20A 3-Pin (2+Tab) DP T/R Cut Tape 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 50V 20A DP |
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