- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358643 > 3SK298 (Hitachi,Ltd.) Silicon N-Channel Dual Gate MOS FET PDF資料下載
參數(shù)資料
| 型號： | 3SK298 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET |
| 中文描述： | 硅N溝道雙柵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 3SK298 |
3SK298
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSX
12
—
—
V
I
D
= 200
μ
A , V
G1S
= –3 V,
V
G2S
= –3 V
I
G1
=
±
10
μ
A, V
G2S
= V
DS
= 0
Gate 1 to source breakdown
voltage
V
(BR)G1SS
±
8
—
—
V
Gate 2 to source breakdown
voltage
V
(BR) G2SS
±
8
—
—
V
I
G2
=
±
10
μ
A, V
G1S
= V
DS
= 0
Gate 1 cutoff current
I
G1SS
I
G2SS
I
DS(on)
—
—
±
100
±
100
nA
V
G1S
=
±
6 V, V
G2S
= V
DS
= 0
V
G2S
=
±
6 V, V
G1S
= V
DS
= 0
V
DS
= 6 V, V
G1S
= 0.75V,
V
G2S
= 3 V
V
DS
= 10 V, V
G2S
= 3V,
I
D
μ
A
V
DS
= 10 V, V
G1S
= 3V,
I
D
μ
A
V
DS
= 6 V, V
G2S
= 3V,
I
D
V
DS
= 6 V, V
G2S
= 3V,
I
D
Gate 2 cutoff current
—
—
nA
Drain current
0.5
—
10
mA
Gate 1 to source cutoff voltage V
G1S(off)
0
—
+1.0
V
Gate 2 to source cutoff voltage V
G2S(off)
0
—
+1.0
V
Forward transfer admittance
|y
fs
|
16
20
—
mS
Input capacitance
Ciss
2.4
2.9
3.4
pF
Output capacitance
Coss
0.8
1.0
1.4
pF
Reverse transfer capacitance
Crss
—
0.023
0.04
pF
Power gain
PG
22
25
—
dB
V
DS
= 6 V, V
G2S
= 3V,
I
D
Noise figure
NF
—
1.0
1.8
dB
Power gain
PG
12
15
—
dB
V
DS
= 6 V, V
G2S
= 3V,
I
D
Noise figure
NF
—
3.2
4.5
dB
Noise figure
NF
—
2.8
3.5
dB
V
DS
= 6 V, V
G2S
= 3V,
I
D
Note:
Marking is “ZP–”
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 3SK299 | N-Channeal GaAs Dual-Gate MES FET(N溝道砷化鎵MES場效應(yīng)管) |
| 3SK300 | CABLE ASSEMBLY; LEAD-FREE SOLDER; N MALE TO N FEMALE; 50 OHM, PE-SR401FL (.250" RE-SHAPABLE); 60" CABLE LENGTH |
| 3SK309 | GaAs N Channel Dual Gate MES FET UHF RF Amplifier |
| 3SK317 | Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 3SK318 | Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK298ZP-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET |
| 3SK299 | 制造商:NEC 制造商全稱:NEC 功能描述:RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD |
| 3SK299(NE25118) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 3SK300 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 3SK300ZR-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
發(fā)布緊急采購，3分鐘左右您將得到回復。