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參數(shù)資料
| 型號： | 3SK298 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET |
| 中文描述： | 硅N溝道雙柵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 3SK298 |
3SK298
9
S Parameter
(V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA, Z
O
= 50 )
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
50
0.994
–5.8
2.04
173.6
0.00116
76.9
0.993
–2.2
100
0.993
–11.0
2.02
167.4
0.00132
85.7
0.993
–4.5
150
0.986
–16.8
2.00
161.5
0.00229
78.2
0.991
–6.4
200
0.980
–22.5
1.98
155.5
0.00313
73.5
0.990
–8.5
250
0.973
–27.8
1.94
149.6
0.00427
68.7
0.987
–10.5
300
0.950
–33.0
1.90
142.6
0.00473
63.9
0.985
–12.5
350
0.936
–38.3
1.86
137.1
0.00536
64.3
0.982
–14.4
400
0.924
–43.4
1.83
131.6
0.00561
64.5
0.979
–16.2
450
0.912
–48.0
1.77
126.8
0.00562
60.9
0.975
–18.2
500
0.893
–52.5
1.71
121.0
0.00640
53.5
0.971
–20.2
550
0.874
–57.3
1.67
115.5
0.00638
49.3
0.967
–22.0
600
0.859
–62.0
1.64
111.1
0.00647
49.0
0.964
–23.9
650
0.846
–66.1
1.58
106.7
0.00667
50.2
0.960
–25.8
700
0.829
–69.8
1.50
102.1
0.00694
49.3
0.955
–27.6
750
0.810
–74.2
1.46
97.1
0.00661
46.6
0.952
–29.4
800
0.802
–78.0
1.44
92.7
0.00618
43.7
0.948
–31.2
850
0.791
–81.6
1.38
88.9
0.00622
44.7
0.944
–33.2
900
0.778
–84.6
1.34
84.2
0.00615
43.6
0.940
–35.1
950
0.756
–88.5
1.30
80.2
0.00576
45.1
0.935
–36.8
1000
0.751
–92.2
1.26
75.9
0.00562
40.7
0.932
–38.5
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 3SK298ZP-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET |
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| 3SK300ZR-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
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