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參數(shù)資料
| 型號： | 3SK298 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET |
| 中文描述： | 硅N溝道雙柵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大小： | 54K |
| 代理商： | 3SK298 |
3SK298
8
10
5
4
3
2
1.5
1
.8
–2
–3
–4
–5
–10
.6
.4
.2
0
–.2
–.4
–.6
–.8
–1
–1.5
.2
.4
.6 .8
2
3 4 5
1.5
10
DS
I = 10 mA , Zo = 50
G2S
V = 6 V , V = 3 V
S11 Parameter vs. Frequency
Condition:
50 to 1000 MHz (50 MHz step)
1.0
Scale: 0.5 / div.
60
°
0
°
30
°
90
°
120
°
150
°
180
°
–150
°
–90
°
–60
°
–30
°
–120
°
DS
I = 10 mA , Zo = 50
G2S
V = 6 V , V = 3 V
S21 Parameter vs. Frequency
Condition:
50 to 1000 MHz (50 MHz step)
Scale: 0.002 / div.
60
°
0
°
30
°
90
°
120
°
150
°
180
°
–150
°
–90
°
–60
°
–30
°
–120
°
DS
I = 10 mA , Zo = 50
G2S
V = 6 V , V = 3 V
S12 Parameter vs. Frequency
Condition:
50 to 1000 MHz (50 MHz step)
10
5
4
3
2
1.5
1
.8
–2
–3
–4
–5
–10
.6
.4
.2
0
–.2
–.4
–.6
–.8
–1
–1.5
.2
.4
.6 .8
2
3 4 5
1.5
10
DS
I = 10 mA , Zo = 50
G2S
V = 6 V , V = 3 V
S22 Parameter vs. Frequency
Condition:
50 to 1000 MHz (50 MHz step)
1.0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK298ZP-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET |
| 3SK299 | 制造商:NEC 制造商全稱:NEC 功能描述:RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD |
| 3SK299(NE25118) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 3SK300 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 3SK300ZR-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
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