- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30702 > 49LF002 (Silicon Storage Technology, Inc.) 2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub PDF資料下載
參數(shù)資料
| 型號： | 49LF002 |
| 廠商： | Silicon Storage Technology, Inc. |
| 英文描述： | 2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub |
| 中文描述： | 2兆位/ 3兆/ 4兆位/ 8兆固件集線器 |
| 文件頁數(shù)： | 36/36頁 |
| 文件大?。?/td> | 412K |
| 代理商： | 49LF002 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁當(dāng)前第36頁
Advance Information
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
9
2001 Silicon Storage Technology, Inc.
S71161-06-000
9/01
504
Sector-Erase Operation
The Sector-Erase operation allows the system to erase the
device on a sector-by-sector basis. The sector architecture
is based on uniform sector size of 4 KByte. The Sector-
Erase operation is initiated by executing a six-byte com-
mand load sequence for Software Data Protection with
Sector-Erase command (30H) and sector address (SA) in
the last bus cycle. The internal Erase operation begins after
the sixth WE# pulse. The End-of-Erase can be determined
using either Data# Polling or Toggle Bit methods. See Fig-
ure 19 for Sector-Erase timing waveforms. Any commands
written during the Sector-Erase operation will be ignored.
Block-Erase Operation
The Block-Erase Operation allows the system to erase
the device in 64 KByte uniform block size for the
SST49LF003A/SST49LF004A/SST49LF008A and 16
KByte uniform block size for the SST49LF002A. The
Block-Erase operation is initiated by executing a six-byte
command load sequence for Software Data Protection
with Block-Erase command (50H) and block address.
The internal Block-Erase operation begins after the sixth
WE# pulse. The End-of-Erase can be determined using
either Data# Polling or Toggle Bit methods. See Figure
20 for timing waveforms. Any commands written during
the Block-Erase operation will be ignored.
Chip-Erase
The SST49LF00xA device provides a Chip-Erase opera-
tion only in PP Mode, which allows the user to erase the
entire memory array to the ‘1’s state. This is useful when
the entire device must be quickly erased.
The Chip-Erase operation is initiated by executing a six-
byte Software Data Protection command sequence with
Chip-Erase command (10H) with address 5555H in the last
byte sequence. The internal Erase operation begins with
the rising edge of the sixth WE#. During the internal Erase
operation, the only valid read is Toggle Bit or Data# Polling.
timing diagram, and Figure 29 for the flowchart. Any com-
mands written during the Chip-Erase operation will be
ignored.
Write Operation Status Detection
The SST49LF00xA device provides two software means
to detect the completion of a Write (Program or Erase)
cycle, in order to optimize the system write cycle time. The
software detection includes two status bits: Data# Polling
(DQ7) and Toggle Bit (DQ6). The End-of-Write detection
mode is enabled after the rising edge of WE# which ini-
tiates the internal Program or Erase operation.
The actual completion of the nonvolatile write is asynchro-
nous with the system; therefore, either a Data# Polling or Tog-
gle Bit read may be simultaneous with the completion of the
Write cycle. If this occurs, the system may possibly get an
erroneous result, i.e., valid data may appear to conflict with
either DQ7 or DQ6. In order to prevent spurious rejection, if an
erroneous result occurs, the software routine should include a
loop to read the accessed location an additional two (2) times.
If both reads are valid, then the device has completed the
Write cycle, otherwise the rejection is valid.
Data# Polling (DQ7)
When the SST49LF00xA device is in the internal Program
operation, any attempt to read DQ7 will produce the com-
plement of the true data. Once the Program operation is
completed, DQ7 will produce true data. Note that even
though DQ7 may have valid data immediately following the
completion of an internal Write operation, the remaining
data outputs may still be invalid: valid data on the entire
data bus will appear in subsequent successive Read
cycles after an interval of 1 s. During internal Erase opera-
tion, any attempt to read DQ7 will produce a ‘0’. Once the
internal Erase operation is completed, DQ7 will produce a
‘1’. The Data# Polling is valid after the rising edge of fourth
WE# pulse for Program operation. For Sector- or Chip-
Erase, the Data# Polling is valid after the rising edge of
sixth WE# pulse. See Figure 16 for Data# Polling timing
diagram and Figure 27 for a flowchart. Proper status will
not be given using Data# Polling if the address is in the
invalid range.
Toggle Bit (DQ6)
During the internal Program or Erase operation, any con-
secutive attempts to read DQ6 will produce alternating ‘0’s
and ‘1’s, i.e., toggling between 0 and 1. When the internal
Program or Erase operation is completed, the toggling will
stop. The device is then ready for the next operation. The
Toggle Bit is valid after the rising edge of fourth WE# pulse
for Program operation. For Sector-, Block- or Chip-Erase,
the Toggle Bit is valid after the rising edge of sixth WE#
ure 27 for a flowchart.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 4A000MH5 | 2-Input NAND Gate |
| 4A002MH5 | 2-Input NOR Gate |
| 4A004MH5 | 4A004MH5 |
| 4A032MH5 | 4A032MH5 |
| 4A08P-505-500 | Surge Line Protection Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 49LV1614-90TI | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 49M-011059-FX4X10 | 制造商:Aker Technology Company Ltd 功能描述:FX4X10 Series 11.0590MHZ 30PPM 20PF SMD Crystal |
| 49M-027000-FX4X12 | 制造商:Aker Technology Company Ltd 功能描述:FX4X12 Series 27MHZ 30PPM 20PF SMD Crystal |
| 49M-10 | 制造商:Honeywell Sensing and Control 功能描述: |
| 49M1K | 功能描述:工業(yè)移動感應(yīng)器和位置傳感器 RESISTIVE & OPTICAL RoHS:否 制造商:Honeywell 輸出類型:Analog - Current 電壓額定值:12 VDC to 30 VDC 線性:+/- 0.0011 % 溫度范圍:- 40 C to + 85 C 總電阻: 容差: 類型:Rotary Sensor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。