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參數(shù)資料
| 型號： | 4AK19 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 4AK19 |
4AK19
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
120
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
5A
Drain peak current
I
D(pulse)
Note1
10
A
Body-drain diode reverse drain current
I
DR
5A
Channel dissipation
Pch(Tc = 25
°C) Note2
28
W
Channel dissipation
Pch
Note2
3.5
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 s, duty cycle ≤ 1%
2. 4 devices poeration
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
120
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100 A, VDS = 0
Zero gate voltege drain current
I
DSS
—
100
AV
DS = 100 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.3
0.5
I
D = 2.5 A, VGS = 10 V
Note3
Static drain to source on state
resistance
R
DS(on)
—
0.35
0.6
I
D = 2.5 A, VGS = 4 V
Note3
Forward transfer admittance
|y
fs|
35—
S
I
D = 2.5 A, VDS = 10 V
Note3
Input capacitance
Ciss
—
25
—
pF
V
DS = 10 V
Output capacitance
Coss
—
140
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
3
—
pF
f = 1 MHz
Gate series resistance
Rg
—
2.5
—
k
V
DS = 0, VGS = 0, f = 1 MHz
Turn-on delay time
t
d(on)
—
0.3
—
sV
GS = 10 V, ID = 2.5 A
Rise time
t
r
—
0.45
—
sR
L = 12
Turn-off delay time
t
d(off)
—
6.6
—
s
Fall time
t
f
—
1.4
—
s
Body–drain diode forward voltage
V
DF
—
1.1
—
V
I
F = 5 A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
600
—
ns
I
F = 5 A, VGS = 0
diF/ dt = 50A/
s
Note:
3. Pulse test
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| 4AK20 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
| 4AK21 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
| 4AK22 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
| 4AK23 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
| 4AK25 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
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