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參數(shù)資料
| 型號： | 4AK19 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 4AK19 |
4AK19
3
Main Characteristics
8
6
4
2
0
Channel
Dissipation
Pch
(W)
50
100
150
200
Ambient Temperature
Ta (°C)
Maximum Channel Dissipation Curve
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
each die is idetical
Condition : Channel dissipation of
46
32
28
14
0
Channel
Dissipation
Pch
(W)
50
100
150
200
Case Temperature
Tc (°C)
Maximum Channel Dissipation Curve
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
each die is idetical
Condition : Channel dissipation of
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
50
20
10
2
5
1
0.2
0.5
0.1
0.05
1
3
10
30
100
300
1000
1 ms
PW
=
10
ms
(1shot)
DC
Operation
(Tc
=
25°C)
100
s
10
s
Operation in
this area is
limited by R DS(on)
Ta = 25 °C
5
4
3
2
1
0
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
4
8
12
16
20
V
= 2 V
GS
4 V
3 V
2.5 V
10 V
Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 4AK20 | Silicon N-Channel Power MOS FET Array |
| 4AK21 | Silicon N-Channel Power MOS FET Array |
| 4AK22 | Silicon N-Channel Power MOS FET Array |
| 4AK23 | Silicon N-Channel Power MOS FET Array |
| 4AK25 | Silicon N-Channel Power MOS FET Array |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 4AK20 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
| 4AK21 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
| 4AK22 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
| 4AK23 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
| 4AK25 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
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