參數(shù)資料
型號: 56F802
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: 16-bit Digital Signal Controllers
中文描述: 16位數(shù)字信號控制器
文件頁數(shù): 16/40頁
文件大?。?/td> 2472K
代理商: 56F802
56F802 Technical Data, Rev. 7
16
Freescale Semiconductor
4.
Thermal Characterization Parameter, Psi-JT (
Ψ
JT
), is the "resistance" from junction to reference point
thermocouple on top center of case as defined in JESD51-2.
Ψ
JT
is a useful value to use to estimate junction
temperature in steady state customer environments.
Junction temperature is a function of on-chip power dissipation, package thermal resistance, mounting site
(board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and
board thermal resistance.
See Section 5.1 from more details on thermal design considerations.
TJ = Junction Temperature
TA = Ambient Temperature
5.
6.
7.
3.2 DC Electrical Characteristics
Table 3-4 DC Electrical Characteristics
Operating Conditions:
V
SS
= V
SSA
= 0 V, V
DD
= V
DDA
= 3.0–3.6 V, T
A
= –40
°
to +85
°
C, C
L
50pF
Characteristic
Symbol
Min
Typ
Max
Unit
Input high voltage (XTAL/EXTAL)
V
IHC
2.25
2.75
V
Input low voltage (XTAL/EXTAL)
V
ILC
0
0.5
V
Input high voltage (Schmitt trigger inputs)
1
V
IHS
2.2
5.5
V
Input low voltage (Schmitt trigger inputs)
1
V
ILS
-0.3
0.8
V
Input high voltage (all other digital inputs)
V
IH
2.0
5.5
V
Input low voltage (all other digital inputs)
V
IL
-0.3
0.8
V
Input current high (pullup/pulldown resistors disabled, V
IN
=V
DD
)
I
IH
-1
1
μ
A
Input current low (pullup/pulldown resistors disabled, V
IN
=V
SS
)
I
IL
-1
1
μ
A
Input current high (with pullup resistor, V
IN
=V
DD
)
I
IHPU
-1
1
μ
A
Input current low (with pullup resistor, V
IN
=V
SS
)
I
ILPU
-210
-50
μ
A
Input current high (with pulldown resistor, V
IN
=V
DD
)
I
IHPD
20
180
μ
A
Input current low (with pulldown resistor, V
IN
=V
SS
)
I
ILPD
-1
1
μ
A
Nominal pullup or pulldown resistor value
R
PU
, R
PD
30
K
Output tri-state current low
I
OZL
-10
10
μ
A
Output tri-state current high
I
OZH
-10
10
μ
A
Input current high (analog inputs, V
IN
=V
DDA
)
2
I
IHA
-15
15
μ
A
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