參數(shù)資料
型號(hào)： 934054150215
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 小信號(hào)晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝： PLASTIC, SMD, 4 PIN
文件頁(yè)數(shù)： 11/16頁(yè)
文件大?。?/td> 152K
代理商： 934054150215
1997 Dec 02
4
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
Tj =25 °C unless otherwise specied.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; VG2-S = 4 V; VDS = 5 V; self-biasing current; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
note 1
350
K/W
Rth j-s
thermal resistance from junction to soldering point
200
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VG1-S =VG2-S = 0; ID =10 A7
V
V(BR)G1-SS gate 1-source breakdown voltage VG2-S = 0; ID = 0; IG1-S =10 A7
V
V(BR)G2-SS gate 2-source breakdown voltage VG1-S =VDS = 0; IG2-S =10 A7
V
VG2-S (th)
gate 2-source threshold voltage
VG1-S =5V; VDS =5V; ID =20 A
0.3
0.8
1.2
V
IDSX
self-biasing drain current
VG2-S =4V; VDS =5V
8
16
mA
IG1-SS
gate 1 cut-off current
VG1-S =5V; VG2-S = 0; ID =0
50
nA
IG2-SS
gate 2 cut-off current
VG1-S =VDS = 0; VG2-S =4V
20
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
y
fs
forward transfer admittance
pulsed; Tj =25 °C25
31
mS
Cig1-ss
input capacitance at gate 1
f = 1 MHz
2.2
2.7
pF
Cig2-ss
input capacitance at gate 2
f = 1 MHz
1.6
pF
Coss
output capacitance
f = 1 MHz
1.2
pF
Crss
reverse transfer capacitance f = 1 MHz
25
40
fF
F
noise gure
f = 800 MHz; YS =YS opt
1.7
2.5
dB
Gp
power gain
GS = 2 mS; BS =BS opt; GL = 0.5 mS;
BL =BL opt; f = 200 MHz; see Fig.16
38
dB
GS = 3.3 mS; BS =BS opt; GL = 1 mS;
BL =BL opt; f = 800 MHz; see Fig.17
20
dB
Xmod
cross-modulation
input level for k = 1% at 0 dB AGC;
fw = 50 MHz; funw = 60 MHz; see Fig.18
85
dB
V
input level for k = 1% at 40 dB AGC;
fw = 50 MHz; funw = 60 MHz; see Fig.18
100
dB
V
相關(guān)PDF資料
PDF描述
934050320115 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
934050330215 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
934050320135 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
05F9179 IC-WIDE BANDWIDTH S/G SIG.COND
934054290127 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
934054713215 制造商:NXP Semiconductors 功能描述:SUB ONLY TXSTR
934054900215 制造商:NXP Semiconductors 功能描述:SUB ONLY TXSTR SGNL
934054930215 制造商:NXP Semiconductors 功能描述:Diode Schottky 40V 0.2A 3-Pin TO-236AB T/R
934054945115 制造商:NXP Semiconductors 功能描述:Diode Switching 100V 0.25A 2-Pin SOD-323 T/R
934055092127 制造商:NXP Semiconductors 功能描述:H-OUT #7460
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*