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參數(shù)資料
| 型號： | 934054150215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 152K |
| 代理商： | 934054150215 |
1997 Dec 02
6
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
Fig.9
Drain current as a function of drain-source
voltage; typical values.
VG2-S =4V.
Tj =25 °C.
handbook, halfpage
024
8
fMGM248
6
16
8
12
4
0
ID
(mA)
VDS (V)
Fig.10 Drain current as a function of gate 1 current;
typical values.
VDS = 5 V; VG2-S = 4 V; Tj =25 °C.
handbook, halfpage
8
6
40
MGM249
2
16
8
12
4
0
ID
(mA)
IG1 (A)
VDS = 5 V; VG2nom = 4 V; IDnom =Iself bias; fw = 50 MHz;
funw = 60 MHz; Tamb =25 °C.
Fig.11 Unwanted voltage for 1% cross-modulation
as a function of gain reduction;
typical values (see Fig.18).
handbook, halfpage
0
204060
110
100
80
90
MGM250
gain reduction (dB)
Vunw
(dB
V)
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