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參數(shù)資料
| 型號： | 934054150215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 16/16頁 |
| 文件大?。?/td> | 152K |
| 代理商： | 934054150215 |
1997 Dec 02
9
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
handbook, full pagewidth
BF1105
BF1105R
BF1105WR
MGM257
Rgen
50
50
R1 =
50
10 k
G2
G1
D
S
10 nF
Vi
10 nF
4.7 nF
47
H
4.7 nF
VG2
VDS
Fig.18 Cross-modulation test set-up.
Table 1
Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID =12mA
Table 2
Noise data: VDS = 5 V; VG2-S = 4 V; ID =12mA
f
(MHz)
S11
S21
S12
S22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.994
3.8
3.060
175.4
0.000
86.9
0.985
2.1
100
0.991
7.5
3.047
170.9
0.002
86.1
0.983
4.2
200
0.982
14.7
3.004
162.1
0.003
82.7
0.980
8.3
300
0.968
21.7
2.932
153.4
0.004
79.7
0.976
12.1
400
0.956
28.8
2.896
145.3
0.006
77.8
0.972
16.2
500
0.937
35.4
2.815
137.1
0.007
76.7
0.967
20.0
600
0.918
41.8
2.735
129.2
0.007
76.3
0.961
23.7
700
0.897
48.1
2.651
121.5
0.008
76.7
0.955
27.3
800
0.878
54.0
2.575
114.0
0.008
79.7
0.948
30.9
900
0.858
59.9
2.482
106.5
0.008
82.2
0.941
34.4
1000
0.840
65.5
2.396
99.5
0.008
88.0
0.935
37.9
f
(MHz)
Fmin
(dB)
Γopt
Rn
(
)
(ratio)
(deg)
800
1.5
0.674
39.7
37.15
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