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參數(shù)資料
| 型號(hào)： | 934054150215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 14/16頁 |
| 文件大?。?/td> | 152K |
| 代理商： | 934054150215 |
1997 Dec 02
7
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
Fig.12 Input admittance as a function of frequency;
typical values.
VDS = 5 V; VG2-S =4V.
ID = 12 mA; Tamb =25 °C.
handbook, halfpage
MGM251
102
102
10
102
103
101
1
10
f (MHz)
yis
(mS)
gis
bis
Fig.13 Reverse transfer admittance and phase as
a function of frequency; typical values.
VDS = 5 V; VG2-S =4V.
ID = 12 mA; Tamb =25 °C.
handbook, halfpage
MGM252
103
102
10
1
10
102
103
f (MHz)
|yrs|
(
S)
rs
(deg)
103
1
10
102
rs
|yrs|
Fig.14 Forward transfer admittance and phase as
a function of frequency; typical values.
VDS = 5 V; VG2-S =4V.
ID = 12 mA; Tamb =25 °C.
handbook, halfpage
MGM253
102
fs
(deg)
102
1
10
1
10
102
103
f (MHz)
|yfs|
(mS)
fs
|yfs|
Fig.15 Output admittance as a function of
frequency; typical values.
VDS = 5 V; VG2-S =4V.
ID = 12 mA; Tamb =25 °C.
handbook, halfpage
MGM254
10
1
101
102
10
102
103
f (MHz)
yos
(mS)
bos
gos
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