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參數(shù)資料
| 型號(hào)： | 934054150215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁(yè)數(shù)： | 12/16頁(yè) |
| 文件大小： | 152K |
| 代理商： | 934054150215 |
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1997 Dec 02
5
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
Fig.5 Output characteristics; typical values.
VG2-S =4V.
Tj =25 °C.
handbook, halfpage
024
8
25
0
20
MGM244
6
15
10
5
ID
(mA)
VDS (V)
1.6 V
1.5 V
1.4 V
VG1 = 1.7 V
1.3 V
1.2 V
1.1 V
1 V
Fig.6 Transfer characteristics; typical values.
VDS =5V.
Tj =25 °C.
handbook, halfpage
0
40
20
30
10
0
0.5
2.5
MGM245
1
1.5
2
VG1 (V)
ID
(mA)
3 V
2 V
1 V
VG2-S = 4 V 3.5 V
2.5 V
1.5 V
Fig.7
Forward transfer admittance as a function
of drain current; typical values.
VDS =5V.
Tj =25 °C.
handbook, halfpage
0
102030
40
30
10
0
20
MGM246
ID (mA)
yfs
(mS)
3.5 V
3 V
2.5 V
2 V
VG2-S = 4 V
Fig.8
Drain current as a function of gate 2
voltage; typical values.
handbook, halfpage
0
16
8
12
4
0
15
MGM247
23
4
ID
(mA)
VG2-S (V)
(1) (2)
(3)
(4) (5)
(1) VDS =5V.
(2) VDS = 4.5 V.
(3) VDS =4V.
(4) VDS = 3.5 V.
(5) VDS =3V.
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